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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH16S72DCFA-6
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OCR Text |
6
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM DESCRIPTION
The MH16S72DCFA is 16777216 - word x 72-bit Sy nchro...supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank... |
Description |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
938.35K /
56 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH16S72BCFA-6 B99036
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OCR Text |
6
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change without no...supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank... |
Description |
From old datasheet system 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
931.45K /
56 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH16S72AVJB-6
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OCR Text |
6
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
The MH16S72AVJB is 16777216 - word x 72-bit Sy nc...supply Max.Clock frequency 133MHz Fully synchronous operation referenced to clock rising edge 4-bank... |
Description |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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File Size |
946.39K /
57 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH16M40AJD-6 MH16M40AJD
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OCR Text |
6
Proto-2
FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM
DESCRIPTION
The MH16M40AJD is a 16M word by 40-bit dynamic RAM mo...Supply (+5V) Ground (0V)
DQ1-DQ40 Data Inputs / Outputs
A4 32 A5 33 A6 34
69 68 67 66 65 64... |
Description |
FAST PAGE MODE ( 16 /777 /216-WORD BY 40-BIT ) DYNAMIC RAM FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM From old datasheet system
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File Size |
189.00K /
17 Page |
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Mitsubishi Electric Corporation
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Part No. |
MH32S72BBFA-6
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OCR Text |
6 mitsubishi lsis 16 /jun. /1999 mit-ds-333-0.1 description application main memory unit for computers, microcomputer memory. featur...supply burst length 1/2/4/8/full page (programmable) burst type sequential / interleave (programmabl... |
Description |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:7.5VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:780uF
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File Size |
976.05K /
56 Page |
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Mitsubishi Electric Corporation
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Part No. |
MH32S72DBFA-6
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OCR Text |
6 30 /sep. /1999 mit-ds-352-0.0 mitsubishi electric mitsubishi lsis preliminary spec. some contents are subject to change without notice. d...supply burst length 1/2/4/8/full page (programmable) burst type sequential / interleave (programmabl... |
Description |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:8800uF
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File Size |
964.56K /
56 Page |
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Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
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Part No. |
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
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OCR Text |
...163HG/HGL-5 HY51V(S)65163HG/HGL-6 tRAC 45ns 50ns 60ns tAA 23ns 25ns 30ns tCAC 12ns 13ns 15ns tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns
*
...Supply Voltage Power Supply Voltage Input High Voltage Input Low Voltage Symbol Vcc Vss VIH VIL Min ... |
Description |
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50 4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
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File Size |
95.00K /
11 Page |
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Infineon
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Part No. |
HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8
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OCR Text |
6 hyb39s16320tq-7 hyb39s16320tq-8 version 2.1.00 preliminary information sgram 1.1999
edition 1.1999 this edition was realized using the s...supply and are available in 100pin tqfp package. ? high performance: ? single pulsed ras interface... |
Description |
256k x2 x32 SGRAM
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File Size |
762.67K /
37 Page |
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Price and Availability
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