Part Number Hot Search : 
74HC688U A2601 1N5642A IRG4PC PJSD15CW TR3070 NTE1425 20457
Product Description
Full Text Search
  5.8us Datasheet PDF File

For 5.8us Found Datasheets File :: 469    Search Time::1.328ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    HYNIX[Hynix Semiconductor]
Part No. GMS81C3004
OCR Text ...M ............................4 5. PIN FUNCTION......................................5 6. PORT STRUCTURES............................7 7. EL...8us, 15.2us at 4.19MHz - 61us, 244us, 488us, 1.95ms at 32.768KHz * 51 Programmable I/O pins (Include...
Description CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVER
File Size 786.42K  /  90 Page

View it Online

Download Datasheet





    HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HYMP112S64MP8-E4 HYMP112S64LMP8-C4 HYMP112S64LMP8-C5 HYMP112S64LMP8-E3 HYMP112S64LMP8-E4 HYMP112S64MP8 HYMP112S64MP8-C4 HYMP112S64MP8-C5 HYMP112S64MP8-E3
OCR Text ...Programmable CAS Latency 3 / 4 /5 supported * * Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and self refresh supported 7.8us refresh period at Lower than TCASE 85, 3.9us( 85 TCASE 95) * * Serial ...
Description    DDR2 SDRAM SO-DIMM
SCREW LOCKS FEMALE SETS
SCREW LOCKS MALE 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
File Size 398.36K  /  17 Page

View it Online

Download Datasheet
    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H1G0638C-UC_LB0 K4H1G0738C-UC_LA2 K4H1G0638C-UC/LA2 K4H1G0638C-UC/LB0 K4H1G0738C-UC/LA2 K4H1G0738C-UC/LB0
OCR Text .................................. 5 5.0 Package Physical Dimension ..............................................................................8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb-Free pack...
Description Stacked 1Gb C-die DDR SDRAM Specification
File Size 336.97K  /  23 Page

View it Online

Download Datasheet
    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H1G0438M-TC_LB0 K4H1G0438M-TC_LB3 K4H1G0838M-TC_LA2 K4H1G0838M-TC_LB0 K4H1G0438M-TC/LB0 K4H1G0838M-TC/LB0 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB3 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3
OCR Text ...16 IDD current spec. Revision 0.5 (November, 2003) - Modified IDD2N current spec. Revision 0.6 (February, 2004) - Complete DC current spec. ...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description 1Gb M-die DDR SDRAM Specification
File Size 203.73K  /  23 Page

View it Online

Download Datasheet
    SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text ...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size 203.93K  /  23 Page

View it Online

Download Datasheet
    SAMSUNG[Samsung semiconductor]
Part No. K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text ...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
File Size 188.40K  /  22 Page

View it Online

Download Datasheet
    SAMSUNG[Samsung semiconductor]
Part No. K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K4H510838B-NC_LB0 K4H510838B-NC_LB3 K4H510838B-NC_LCC K4H510838B-VC_LA2 K4H510838B-VC_LB0 K4H510838B-VC_LB3
OCR Text ...................................5 5.0 Package Physical Dimension ..............................................................................8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-400 (Leade...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
File Size 341.67K  /  24 Page

View it Online

Download Datasheet
    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text ...atency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except d...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size 195.42K  /  18 Page

View it Online

Download Datasheet
    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
OCR Text ...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size 241.25K  /  24 Page

View it Online

Download Datasheet
    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4H560438E-NC_LB0 K4H560438E-NC_LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560438E-NCB3 K4H560438E-NLA2 K4H560438E-NLB0 K4H560438E-NLB3 K4H560838E-NC_LA2 K4H560838E-NC_LB0 K4H560838E-NC_LB3 K4H560838E-NCA2 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLA2 K4H560838E-NLB0
OCR Text ...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-300 packag...
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
File Size 212.16K  /  24 Page

View it Online

Download Datasheet

For 5.8us Found Datasheets File :: 469    Search Time::1.328ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

▲Up To Search▲
 




Price and Availability
 
Price & Availability of 5.8us

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.46051692962646