4.6mj pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 141 Search Time::2.156ms
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				INFINEON[Infineon Technologies AG]
Part No.	SKB10N60A SKP10N60A SKW10N60A
OCR Text	...0AB TO-247AC TO-263AB 1.35 2.4 62 40 40 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Ch...6mJ 0.1 0.05 0.02 0,4mJ Ets* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 4.3...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
File Size	442.88K / 15 Page	View it Online	Download Datasheet

				Infineon
Part No.	K15N60
OCR Text	...50 c 1.7 - 2 2.3 2.4 2.8 diode forward voltage v f v ge =0v, i f =15a t j =25 c t j =150 c 1.2 - 1.4 1.25...6mj 0.8mj 1.0mj 1.2mj 1.4mj 1.6mj 1.8mj e on * e off e ts * e , switching energy losses 0 ? 20 ...
Description	Search --To SKP15N60
File Size	901.34K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB04N60 SKP04N60
OCR Text	... Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s IF 19 19 10 4 IFpul s VGE tSC Ptot 19 20 10 50 V s W VGE = 15V, VCC 6...6mJ ) Eon and Ets include losses due to diode recovery. 0.4mJ ) Eon and Ets include losses du...
Description	IGBTs & DuoPacks - 4A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	390.12K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW11N60C2
OCR Text	... VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS...6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 54...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
File Size	118.43K / 11 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	IRFY24011 IRFY240M
OCR Text	...tterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http...6mj dv/dt peak diode recovery (3)(5) 5v/ns t j junction temperature range -55 to +150c t s...
Description	N-CHANNEL POWER MOSFET
File Size	750.97K / 3 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP3N100
OCR Text	...fer characteristics stp3n100/fi 4/10 www.datasheet.in transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	215.32K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW60T120 IGW60T12009
OCR Text	4 nov. 09 low loss igbt in trenchstop ? and fieldstop technology ? best in class to247 ? short circuit withs...6mj 8mj 10mj 12mj 14mj 16mj e ts * e on * *) e on and e ts include losses due to diode reco...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology 100 A, 1200 V, N-CHANNEL IGBT, TO-247AD
File Size	344.08K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP12N50C3 SPP12N50C307 SPA12N50C3 SPI12N50C3
OCR Text	...m (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol co...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 18 typ. capacitances c = f ( v ds ) paramete...
Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
File Size	837.26K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP12N50C3 SPP12N50C309 SPA12N50C3 SPI12N50C3
OCR Text	...m (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol co...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 18 typ. capacitances c = f ( v ds ) paramete...
Description	Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology Cool MOS Power Transistor Feature New revolutionary high voltage technology
File Size	639.27K / 14 Page	View it Online	Download Datasheet

				Matsshita / Panasonic
Part No.	2SK3045
OCR Text	...ary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2...
Description	Power F-MOS FETs
File Size	53.69K / 4 Page	View it Online	Download Datasheet

For 4.6mj Found Datasheets File :: 141 Search Time::2.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |