4.300v pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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4.300v Datasheet PDF File

For 4.300v Found Datasheets File :: 10869 Search Time::2.296ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM150SA-6
OCR Text	...0 K2 G2 13 2-6.5 K3 G3 K3 4 2.5 93 108 G3 2-1.0 Tab#110, t=0.5 4 A 2.5 4 K1 G1 K3 G3 CR3 CR2 K2 G2 CR1 K1 G1 K2 K1 12 LABEL A 8 21 45 60 34 K3 K2 K1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 ...
Description	MEDIUM POWER GENERAL USE NON-INSULATED TYPE
File Size	52.59K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM90SA-6
OCR Text	... CR1 K1 G1 Tab#110, t=0.5 4 2.2 A 9 6.5 LABEL A 19 41 56 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (D...
Description	MEDIUM POWER GENERAL USE NON-INSULATED TYPE
File Size	51.13K / 4 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc]
Part No.	TN2130 TN2130K1 TN2130ND
OCR Text	...age Drain Current Min 300 0.8 2.4 -5.5 100 10 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. ...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	448.29K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TS636 TS636D TS636I TS636ID
OCR Text	4.7nV/Hz LOW DISTORTION HIGH SLEW RATE : 90V/s WIDE BANDWIDTH : 52MHz @ -3dB & 18dB gain with 3dB STEPS s GAIN PROGRAMMABLE from -9dB to ...300V/s). This means that the maximum input signal decreases at high frequency. SINGLE SUPPLY OPERATI...
Description	DIFFERENTIAL VARIABLE GAIN AMPLIFIER FOR ADSL LINE INTERFACE
File Size	120.48K / 9 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	TS652 TS652D TS652ID
OCR Text	4.6nV/Hz s LOW DISTORTION s HIGH SLEW RATE : 90V/s s WIDE BANDWIDTH : 52MHz @ -3dB & 18dB gain s GAIN PROGRAMMABLE from -9dB to +30dB w...300V/s). This means that the maximum input signal decreases at high frequency. SINGLE SUPPLY OPERATI...
Description	DIFFERENTIAL VARIABLE GAIN AMPLIFIER
File Size	73.32K / 9 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	TS902C3
OCR Text	4.5 0.2 1.32 9.3 0.5 1.5 Max 1.2 0.2 5.08 0.8 --0.1 2.7 +0.2 0.4 +0.2 Features Surface-mount device Low VF Super high sp...300V / 10A ) Characteristics Forward characteristics TS902C3 (10A) Reverse characteristics ...
Description	LOW LOSS SUPER HIGH SPEED RECTIFIER
File Size	71.47K / 3 Page	View it Online	Download Datasheet

				Fuji Electric ETC[ETC]
Part No.	7MBP50TEA060
OCR Text	...3 Supply voltage of Pre-Driver 4 Input signal voltage 5 Input signal current Alarm signal voltage 6 Alarm signal current 7 Junction temp...300V,Tj=125C IC=50A Fig.1, Fig.6 VDC=300V, IC=50A Fig.1, Fig.6 Internal wiring inductance=50nH Main ...
Description	Econo IPM series IGBT-IPM
File Size	342.73K / 9 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	7MBP75RTB060 7MBP75RTB-060
OCR Text	.... 2 2 0.3 1 0 9 1 9 5 0.3 67.4 1 0 . 1 6 0.2 1 0 . 1 60.2 1 0 . 1 60.2 1 5 . 2 40.25 5 . 0 80.15 5 . 0 80.15 5 . 0 80.15 2 . 5 4 0.1 ...300V 20k Vin GND N Ic Figure 6. Switching Characteristics Test Circuit Icc A ...
Description	IGBT - IPM
File Size	957.00K / 23 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6020LVR
OCR Text	...0 450 3.6 -55 to 150 300 30 35 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...300V 12 VDS=480V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE...
Description	POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.86K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT6025BVFR
OCR Text	... 370 2.96 -55 to 150 300 25 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...300V 12 VDS=480V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, TOTAL GAT...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 25A 0.250 Ohm
File Size	69.66K / 4 Page	View it Online	Download Datasheet

For 4.300v Found Datasheets File :: 10869 Search Time::2.296ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |