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36.0v. Datasheet PDF File

For 36.0v. Found Datasheets File :: 878 Search Time::7.265ms
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				ANALOGICTECH[Advanced Analogic Technologies] IRF[International Rectifier]
Part No.	IRG4IBC20KD IRG4IBC20KDPBF
OCR Text	... See Fig. 9,10,14 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 -- TJ = 150C, See Fig. 10,11,14 37 -- IC = 9.0A, VCC = 480V ns 220 -- VGE = 15V, RG = 50 160 -- Energy losses include "tail" 0.85 -- mJ and diode reverse re...
Description	600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	197.64K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] POWEREX[Powerex Power Semiconductors]
Part No.	CT35SM-8
OCR Text	... VGE = 28V MAXIMUM CONDITION 360V 200A 1000F Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	33.67K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGT1S3N60B3DS HGTP3N60B3D FN4414
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC MIN 600 4.5 1...
Description	7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
File Size	153.27K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGT1S3N60C3DS HGTP3N60C3D FN4140
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = B...
Description	6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes From old datasheet system
File Size	272.82K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP3N60B3 HGT1S3N60B3S HGTD3N60B3S FN4368
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25o...
Description	7A/ 600V/ UFS Series N-Channel IGBTs 7A, 600V, UFS Series N-Channel IGBTs From old datasheet system
File Size	140.49K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP3N60C3 HGTD3N60C3S FN4139
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE...
Description	6A/ 600V/ UFS Series N-Channel IGBTs 6A, 600V, UFS Series N-Channel IGBTs From old datasheet system
File Size	242.35K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG15N120C3D
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = ...
Description	35A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	100.95K / 9 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	HGTG20N60B3
OCR Text	... junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC...
Description	40A, 600V, UFS Series N-Channel IGBTs
File Size	111.27K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M57120L M57120
OCR Text	... 30 Ta = 25C VIN = 113V 240V 360V OUTPUT VOLTAGE, Vo, (VOLTS) 21 3 20 RL = 10 RL = RL = 20 20 2 19 10 1 18 0 0 25 50 75 100 125 AMBIENT TEMPERATURE, Ta, (C) 0 0 0.05 0.10 0.15 0.20 LOAD CURRENT, IL,...
Description	HIGH VOLTAGE INPUT dc-dc CONVERTER
File Size	62.25K / 4 Page	View it Online	Download Datasheet

				Harris Corporation
Part No.	HGTG40N60B3
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TC = +125oC, RGE = 25. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 File Number ...
Description	70A, 600V, UFS Series N-Channel IGBT
File Size	49.63K / 6 Page	View it Online	Download Datasheet

For 36.0v. Found Datasheets File :: 878 Search Time::7.265ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |