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NTE[NTE Electronics]
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| Part No. |
NTE6093
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| OCR Text |
.... . . . . . . . . . . . . . . . 30a Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....60v, Square Wave, TC = +125C), IFM . . . . . . . . . . . . . 60A Non-Repetitive Peak Surge Current, ... |
| Description |
Silicon Rectifier Dual, Schottky Barrier Silicon Rectifier Dual Schottky Barrier
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| File Size |
17.28K /
2 Page |
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ROHM[Rohm]
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| Part No. |
UMZ1N IMZ1A EMZ1
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| OCR Text |
....30mA 0.25mA
10
Ta=25C
30a 27A
8
24A 21A
Ta=100C
25C -55C
60
0.20mA 0.15mA
6
18A 15A
2 1 0.5 0.2 0.1 0 0.2
40
0.10mA
4
12A 9A
20
0.05mA
2
6A 3A
IB=0A
0.4
0.6
0.8
1.0
... |
| Description |
General purpose transistor (dual transistors)
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| File Size |
89.22K /
5 Page |
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it Online |
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Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
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| Part No. |
AP9972GI
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| OCR Text |
..., VDD=30V , L=1mH , RG=25 , IAS=30a.
AP9972GI
120
120
10V 7.0V T C = 150 C
ID , Drain Current (A) ID , Drain Current (A)
90
10V 7.0V
o
90
T C =25 C
o
5.0V
60
5.0V
60
4.5V
4.5V
30
30
V G =3.0V
V... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
68.43K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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| Part No. |
FQD30N06 FQU30N06 FQD20N06 FQU20N06 FQD30N06TF
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| OCR Text |
... 25 , Starting TJ = 25C 3. ISD 30a, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2001 Fairchild Semiconductor Corporation
Rev. A... |
| Description |
60v N-Channel QFET 60v N-Channel MOSFET 22.7 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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| File Size |
659.15K /
9 Page |
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it Online |
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Price and Availability
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