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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS8660S
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMS8660S Rev.C (W) 2 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 120 100 ID, DRAIN CUR...
Description N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)

File Size 373.70K  /  8 Page

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    Diodes, Inc.
Part No. BAS70DW-05-7
OCR Text ...te 2) v f 410 1000 mv mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r = 10ma to ...
Description 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE ULTRA SMALL, PLASTIC PACKAGE-6

File Size 67.15K  /  3 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDZ191P
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ191P Rev.F (W) 2 www.fairchildsemi.com www.DataSheet4U.com FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise no...
Description P-Channel 1.5V PowerTrench WL-CSP MOSFET

File Size 387.58K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDZ193P
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ193P Rev.C1 (W) 2 www.fairchildsemi.com P-Channel 1.7V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25C unless otherwise noted 16 14 -ID, DRAIN CURREN...
Description P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mohm

File Size 207.49K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDZ493P
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ493P Rev.B(W) 2 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 DRAIN T...
Description P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm

File Size 365.73K  /  6 Page

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    IRF[International Rectifier]
Part No. IRF7210
OCR Text ...oard, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7210 20 VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -0.8V TOP 300s PULSE WIDTH TJ = 25C 16 16 -I , Drain-to-Source Current (A) D -I , Drain-to-Sou...
Description HEXFET Power MOSFET

File Size 138.32K  /  7 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7220
OCR Text ...See Figure 10) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7220 80 VG S - 4 .5V - 4.0 V - 3.0 V - 2.0 V - 1.8 V - 1.6 V - 1.4 V BO TTO M - 1.2 V TO P 60 -I D , D rain-to -S ource C urrent (A ) -ID , D ra in-t...
Description HEXFET Power MOSFET HEXFET功率MOSFET

File Size 137.51K  /  7 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE66
OCR Text ...ote 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 0.53mH, Vdd = 25V, RG = 25, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 26.14K  /  3 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE67
OCR Text ...ote 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, Vdd = 50V, RG = 25, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless ot...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 26.12K  /  3 Page

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    http://
Part No. BAS40WS-T1
OCR Text ...00 1000 mv @ i f = 1.0ma, t < 300s @ i f = 10ma, t < 300s @ i f = 40ma, t < 300s reverse leakage current i r ? 20 200 na @ v r = 30v, t < 300s junction capacitance c j ?4.05.0pf v r = 0v, f = 1.0mhz reverse recovery time t rr ??...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE

File Size 33.67K  /  3 Page

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