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  3 3v 128k x 32 36 pipeline bur Datasheet PDF File

For 3 3v 128k x 32 36 pipeline bur Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-xxxHP M38030F2L-xxxKP M38030F2L-xxxSP M38030F2L-xxxWG M38030MAL-xxxWG M38030MAL-xxxKP M38030FAL-xxxSP M38031FAL-xxxHP M38030FAL-xxxWG M38030MAL-xxxHP M38030FAL-xxxKP M38031FAL-xxxKP M38030FAL-xxxHP M38031FAL-xxxSP M38031FAL-xxxWG M38030MAL-xxxSP M38030F3L-xxxHP M38030F3L-xxxWG M38030M3L-xxxKP M38030F3L-xxxSP M38030F3L-xxxKP M38030M3L-xxxHP M38030FBL-xxxWG M38030MBL-xxxHP M38030FBL-xxxHP M38030FBL-xxxSP M38030MBL-xxxKP M38030M2L-xxxHP M38030M2L-xxxKP M38030M2L-xxxSP M38030M2L-xxxWG M38031F2L-xxxHP M38031F2L-xxxKP M38031F2L-xxxSP M38031F2L-xxxWG M38030FB-xxxHP M38031FBL-xxxSP M38035MBL-xxxSP M38038FBL-xxxSP M38039FBL-xxxSP M38030MBL-xxxSP M38036MBL-xxxSP M38037FBL-xxxSP M38037MBL-xxxSP M38036FBL-xxxSP M38038MBL-xxxSP M38031FC-xxxHP M38031FC-xxxKP M38031FC-xxxWG M38031FCL-xxxHP M38031FCL-xxxKP M38031FCL-xxxSP M38031FCL-xxxWG M38031F5-xxxKP M38031F5-xxxSP M38031F5-xxxWG M38031F5L-xxxHP M38031F5L-xxxKP M38031F5L-xxxSP M38031F5L-xxxWG M38030F1-xxxHP M38030F1-xxxKP M38030F1-xxxSP M38030F1-xxxWG M38030F1L-xxxHP M38030F1L-xxxKP M38030F1L-xxxSP M38030F1L-xxxWG M38031F1-xxxKP M38031F1-xxxWG M38031F1L-xxxHP M38031F1L-xxxKP M38031F6-xxxHP M38031F6-xxxKP M38031F6-xxxSP M38031F6-xxxWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-x and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) pipelined DCD Sync SRAM; Architecture: Standard Sync, pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K x 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128k x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) pipelined DCD Sync SRAM; Architecture: Standard Sync, pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128k x 36) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128k x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) xDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128k x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128k x 36) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128k x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128k x 8) Static RAM; Density: 1 Mb; Organization: 128kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128k x 8) Static RAM; Density: 1 Mb; Organization: 128kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128k x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size 1,602.57K  /  119 Page

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    Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Part No. IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1024L IS63LV1024L-10B IS63LV1024L-10BI IS63LV1024L-10HI IS63LV1024L-10J IS63LV1024L-10JI IS63LV1024L-10KI IS63LV1024L-10T IS63LV1024L-10TI IS63LV1024L-12B IS63LV1024L-12BI IS63LV1024L-12H IS63LV1024L-12J IS63LV1024L-12JI IS63LV1024L-12K IS63LV1024L-12KI IS63LV1024L-12TI IS63LV1024L-8B IS63LV1024L-8BI IS63LV1024L-8H IS63LV1024L-8J IS63LV1024L-8JI IS63LV1024L-8K IS63LV1024L-8KI IS63LV1024L-8T IS63LV1024L-10K
Description 128k x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128k x 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128k x 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128k x 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
File Size 42.57K  /  9 Page

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    Cypress Semiconductor Corp.
Part No. CYM1836V33 1836V33
Description 128k x 32 3.3V Static RAM Module(128k x 32 3.3V 静态RAM模块) 128k的32 3.3静态存储器模块28K的32 3.3静态内存模块）
From old datasheet system
File Size 259.86K  /  7 Page

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    Cypress Semiconductor, Corp.
Part No. CY7C1019CV33-12ZxCT
Description 128k x 8 Static RAM; Density: 1 Mb; Organization: 128kb x 8; Vcc (V): 3.0 to 3.6 V; 128k x 8 STANDARD SRAM, 12 ns, PDSO32
File Size 391.51K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM68V1002CI
Description 128k x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128k x 8位高速CMOS 静RAM)
File Size 130.58K  /  9 Page

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    W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55LE W24L01B-55LI W24L01B-55LL W24L01B-70LE W24L01B-70LI W24L01B-70LL W24

WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
Part No. W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55LE W24L01B-55LI W24L01B-55LL W24L01B-70LE W24L01B-70LI W24L01B-70LL W24L01B-55 W24L01T-70LL W24L01 W24L01Q-55LE W24L01Q-55LI W24L01Q-55LL W24L01Q-70LE W24L01Q-70LI W24L01Q-70LL W24L01S-55LE W24L01S-55LI W24L01S-55LL W24L01T-55LE W24L01T-55LI W24L01T-55LL W24L01T-70LE W24L01T-70LI
Description SUBMINIATURE POWER RELAY
128k x 8 CMOS STATIC RAM 128k x 8 STANDARD SRAM, 70 ns, PDSO32
File Size 180.96K  /  11 Page

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    CY62136CV30 CY62136CV30LL-55BAI CY62136CV30LL-55BVI CY62136CVLL-70BVI CY62136CV CY62136CV30LL-70BAI CY62136CV30LL-70BVI

CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY62136CV30 CY62136CV30LL-55BAI CY62136CV30LL-55BVI CY62136CVLL-70BVI CY62136CV CY62136CV30LL-70BAI CY62136CV30LL-70BVI CY62136CV33 CY62136CV33LL-55BAI CY62136CV33LL-55BVI CY62136CV33LL-70BAI CY62136CV33LL-70BVI CY62136CVLL-70BAI
Description 2M (128k x 16) Static RAM 128k x 16 STANDARD SRAM, 70 ns, PBGA48
File Size 212.52K  /  13 Page

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    GS840H18AB-100I GS840H18AB-180 GS840H18AGT-100 GS840H18AT-166 GS840H36AT-180I GS840H18AB-100 GS840H18AB-150 GS840H18AB-1

GSI[GSI Technology]
Part No. GS840H18AB-100I GS840H18AB-180 GS840H18AGT-100 GS840H18AT-166 GS840H36AT-180I GS840H18AB-100 GS840H18AB-150 GS840H18AB-150I GS840H18AB-166 GS840H18AB-166I GS840H18AB-180I GS840H18AGT-100I GS840H18AGT-150 GS840H18AGT-150I GS840H18AGT-166 GS840H18AGT-166I GS840H18AGT-180 GS840H18AGT-180I GS840H18AT GS840H18AT-100 GS840H18AT-100I GS840H18AT-150 GS840H18AT-150I GS840H18AT-166I GS840H18AT-180 GS840H18AT-180I GS840H32AB-100 GS840H32AB-100I GS840H32AB-150 GS840H32AB-150I GS840H32AB-166 GS840H32AB-166I GS840H32AB-180 GS840H32AB-180I GS840H32AGT-100 GS840H32AGT-100I GS840H32AGT-150 GS840H32AGT-150I GS840H32AGT-166 GS840H32AGT-166I GS840H32AGT-180 GS840H32AGT-180I GS840H32AT-100 GS840H32AT-100I GS840H32AT-150 GS840H32AT-150I GS840H32AT-166 GS840H32AT-166I GS840H32AT-180 GS840H32AT-180I GS840H36AB-100 GS840H36AB-100I GS840H36AB-150 GS840H36AB-150I GS840H36AB-166 GS840H36AB-166I GS840H36AB-180 GS840H36AB-180I GS840H36AGT-100 GS840H36AGT-100I GS840H36AGT-150 GS840H36AGT-150I GS840H36AGT-166 GS840H36AGT-166I GS840H36AGT-180 GS840H36AGT-180I GS840H36AT-100 GS840H36AT-100I GS840H36AT-150 GS840H36AT-166 GS840H36AT-166I GS840H36AT-180 GS840H36AT-150I
Description 256K x 18, 128k x 32, 128k x 36 4Mb Sync burst SRAMs
File Size 513.43K  /  30 Page

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    CY7C109BN09 CY7C109BN-20VC CY7C1009BN-20VC CY7C109BN-20VI CY7C1009BN-15VC

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Cypress Semiconductor, Corp.
Part No. CY7C109BN09 CY7C109BN-20VC CY7C1009BN-20VC CY7C109BN-20VI CY7C1009BN-15VC
Description 128k x 8 Static RAM 128k x 8 STANDARD SRAM, 15 ns, PDSO32
File Size 436.03K  /  9 Page

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    Cypress Semiconductor Corp.
Part No. CY62136V18 CY62136V CY62136V18MOBL2 CY62136VMOBL
Description 128k x 16 Static RAM(128k x 16 静态RAM)
From old datasheet system
File Size 220.55K  /  10 Page

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Price & Availability of 3 3v 128k x 32 36 pipeline bur

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