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Electronic Theatre Controls, Inc.
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Part No. |
EFM-2100TR
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OCR Text |
2110 ? 2170 mhz efm-2100 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitabilit... |
Description |
E-Series Surface Mount Mixer 2110-2170MHz E系列表面贴装混合110 - 2170MHz
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File Size |
84.56K /
4 Page |
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NXP Semiconductors N.V.
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Part No. |
BLF7G22L-160 BLF7G22LS-160
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OCR Text |
...(db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 1300 28 43 18.0 30 ? 32 [1]
blf7g22l-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1... |
Description |
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
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File Size |
1,107.65K /
18 Page |
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飞思卡尔半导体(中国)有限公司
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Part No. |
MRF18030BLR3
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OCR Text |
... 250 ma, p out = 30 w (cw) f = 2110 mhz f = 1710 mhz 1840 1880 1960 4.04 - j10.22 6.20 - j12.29 6.12 - j12.29 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 1990 2110 15.19 - j11.85 8.61 - j12.10 5.93 - j6.66 3.82 - j5.33 f = 1710 mhz f ... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
344.88K /
8 Page |
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NXP Semiconductors N.V.
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Part No. |
BLF7G22LS-100P
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OCR Text |
...(db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 720 28 20 19.1 28.5 ? 34 [1]
blf7g22l-100p_blf7g22ls-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data shee... |
Description |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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File Size |
671.16K /
14 Page |
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NXP Semiconductors N.V.
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Part No. |
BLF7G22L-250P BLF7G22LS-250P
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OCR Text |
2110 mhz to 2170 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent ther... |
Description |
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Power LDMOS transistor BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
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File Size |
887.79K /
14 Page |
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飞思卡尔半导体(中国)有限公司
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Part No. |
100B0R3BW 100B8R2CW
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OCR Text |
...le semiconductor technical data 2110 - 2170 mhz, 30 w, 28 v single w - cdma rf ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw4ic2230nbr1 mw4ic2230nbr1 mw4ic2230gnbr1 case 1329a - 03 to - 272 wb - 16 g... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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File Size |
702.41K /
16 Page |
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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Part No. |
MRF5P21180R6 MRF5P21180
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OCR Text |
...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 V... |
Description |
N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor
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File Size |
406.67K /
9 Page |
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it Online |
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Price and Availability
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