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  2.0e Datasheet PDF File

For 2.0e Found Datasheets File :: 4669    Search Time::1.985ms    
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    BU4508AX

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU4508AX
OCR Text ...4kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated ...0E+01 0.7 0 T 1.0E-05 1.0E-03 1.0E-01 0.6 0.001 1.0E-07 0 0.5 1 1.5 2 ...
Description Silicon Diffused Power Transistor 8 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 58.63K  /  7 Page

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    BU4508AZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4508AZ
OCR Text ...kHz PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated ...0E+01 0.7 0.001 1.0E-07 T 0.6 1.0E-05 1.0E-03 1.0E-01 0 0.5 1 1.5 2 2.5 I...
Description Silicon Diffused Power Transistor

File Size 57.56K  /  7 Page

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    BU4508DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU4508DF
OCR Text ...5 300 MAX. 1500 800 8 15 45 3.0 2.2 400 UNIT V V A A W V A V ns Ths 25 C IC = 5.0 A; IB = 1.25 A f = 16kHz IF = 5 A ICsat = 5A; f = 16kH...0E+01 0.7 0 T 1.0E-05 1.0E-03 1.0E-01 0.6 0 1 2 3 IB / A 4 0.001 1.0...
Description Silicon Diffused Power Transistor(硅扩散功率型晶体 8 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 52.42K  /  6 Page

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    BU4508DX NXPSEMICONDUCTORS-BU4508DX

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BU4508DX NXPSEMICONDUCTORS-BU4508DX
OCR Text ...5 300 MAX. 1500 800 8 15 45 3.0 2.2 400 UNIT V V A A W V A V ns Ths 25 C IC = 5.0 A; IB = 1.25 A f = 16kHz IF = 5 A ICsat = 5A; f = 16kH...0E+01 0.7 0 T 1.0E-05 1.0E-03 1.0E-01 0.6 0 1 2 3 IB / A 4 0.001 1.0...
Description Silicon Diffused Power Transistor

File Size 54.66K  /  6 Page

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    BU4508DZ

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4508DZ
OCR Text ...5 300 MAX. 1500 800 8 15 32 3.0 2.2 400 UNIT V V A A W V A V ns Ths 25 C IC = 5.0 A; IB = 1.25 A f= 16 kHz IF = 5 A ICsat = 5 A; f = 16k...0E+01 0.7 T 0.6 0 1 2 3 IB / A 4 0.001 1.0E-07 1.0E-05 1.0E-03 1.0E-01 t/s Fig.8. Typi...
Description Silicon Diffused Power Transistor

File Size 53.88K  /  6 Page

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    IRFU2905Z IRFR2905 IRFR2905Z

IRF[International Rectifier]
Part No. IRFU2905Z IRFR2905 IRFR2905Z
OCR Text ...in. Typ. Max. Units 55 --- --- 2.0 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.053 11.1 --- --...0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.P...
Description 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
AUTOMOTIVE MOSFET

File Size 209.23K  /  11 Page

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    IRFU3505 IRFR3505

IRF[International Rectifier]
Part No. IRFU3505 IRFR3505
OCR Text ...Capacitance Min. 55 --- --- 2.0 41 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.057 0.011 -...0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Curr...
Description AUTOMOTIVE MOSFET

File Size 580.87K  /  11 Page

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    IRFU4104 IRFR4104

IRF[International Rectifier]
Part No. IRFU4104 IRFR4104
OCR Text ...in. Typ. Max. Units 40 --- --- 2.0 58 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.032 4.3 --- --- ---...0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidt...
Description 40V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A)
Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 178.95K  /  11 Page

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    IRFU4105Z IRFR4105Z

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU4105Z IRFR4105Z
OCR Text ...in. Typ. Max. Units 55 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.053 19 --- --- --- ...0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.P...
Description 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET(讥\u003d 55V的,的Rds(on)\u003d 24.5mohm,身份证\u003d 30A条)
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 203.46K  /  11 Page

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    Micross Components
Part No. ICE11N70FP
OCR Text ...v gs(th) gate threshold voltage 2.5 3 3.5 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.1 1 a v ds = 700v, v gs = 0...0e-04 1.0e-03 1.0e-05 1.0e-06 1.0e-00 1.0e-01 1.0e-02 100 1000 10 v ds - drain to source voltage (v)...
Description N-Channel Enhancement Mode MOSFET

File Size 756.33K  /  4 Page

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