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MOTOROLA
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| Part No. |
MRF6S18100N
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| OCR Text |
...ications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. GSM Ap...1805 - 1880 MHz or 1930- 1990 MHz) Power Gain -- 14.5 dB Drain Efficiency -- 49% GSM EDGE Applicatio... |
| Description |
The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM
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| File Size |
693.63K /
20 Page |
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it Online |
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AVX, Corp.
AVX Corporation
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| Part No. |
CDR04BX104AKUM CDR03BP331B CDR01B151B CDR01BX561B CDR01BP180B CDR04BP182B CDR01BX471B CDR01B181B CDR01BP100B CDR01B121B CDR01BX392A CDR03BX563A CDR03BP681B CDR05BP472B CDR02BP271B CDR01BX681B CDR01BX182B CDR02BX103B CDR04BX154A CDR05BX334A CDR02BX123A CDR04BP222B CDR03BP391B CDR01BX271B CDR06BX394A CDR03BX333B CDR04BP332B CDR06BP682B CDR01BX332B CDR01BX331B CDR01BX391B CDR01BX222B CDR01BX221B CDR01BX272B CDR01BX821B CDR04BX823A CDR02BX223A CDR03BX153B CDR03BX223B CDR04BX184A CDR05BX224A CDR01BP150B CDR04BP152B CDR01BP330B CDR04BX124A CDR01BX122B CDR05BX274A CDR01BX152B CDR05BP562B CDR05BX104B CDR06BP822B CDR02BX562B CDR03BX683A CDR05BX823B CDR01BX102B CDR02BX472B CDR01BP220B CDR02BX392B CDR02BX682B CDR01BX472A CDR01BP470B CDR06BP103B CDR02BX822B CDR02BX183A CDR01BP680B CDR06BX474A CDR05BP392B CDR03BX393A CDR02BX153A CDR03BP471B CDR03BX473A CDR03BP102B CDR05BX683B CDR05BX154B CDR04BP272B
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| OCR Text |
...1500 k,m bx 100 cdr01bx182b--- 1800 k bx 100 cdr01bx222b--- 2200 k,m bx 100 cdr01bx272b--- 2700 k bx 100 cdr01bx332b--- 3300 k,m bx 100 ...1805/cdr02 cdr02bp221b--- 220 j,k bp 100 cdr02bp271b--- 270 j bp 100 cdr02bx392b--- 3900 k bx 100 ... |
| Description |
CAP 0.15UF 10% X7R SMD-1812 BULK BASE/BARR/SOLDER R-MIL-PRF-55681 CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.1 uF, SURFACE MOUNT, 1812
Chips
MIL-PRF-55681/Chips Part Number Example CDR01 thru CDR06
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| File Size |
40.36K /
2 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P18190HR6
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| OCR Text |
... watts 1900 1880 1860 1840 1820 1800 1780 16.5 16.3 ?44 28.2 27.8 ?36 ?38 ?42 d , drain efficiency (%) d 16.1 15.9 15.7 15.6 15.5 16.4 16.2 16 15.8 28 27.6 27.4 ?34 ?40 ?10 ?14 v dd = 28 vdc p out = 44 w (avg.) i dq = 2000 ma, 2?carri... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
459.02K /
12 Page |
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it Online |
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WJCI[WJ Communication. Inc.]
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| Part No. |
AP513-PCB AP513
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| OCR Text |
...
32 G a in (d B ) 31 30 29 28 1800
-10 -15 -20 -25 1800
S11
1820 1840 1860 1880
S22
26
1900
1820
1840
1860
1880
1900
-40
-20
0
20
40
60
80
Frequency (MHz) ACPR vs. Output Power vs. Temp... |
| Description |
DCS-band 8W HBT Amplifier Module
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| File Size |
307.96K /
5 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
AP513-PCB
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| OCR Text |
...vcc, icq=1.7a 28 29 30 31 32 33 1800 1820 1840 1860 1880 1900 frequency (mhz) gain (db) return loss +25 c, vcc=12v, icq=1.7a -25 -20 -15 -10 -5 0 1800 1820 1840 1860 1880 1900 frequency (mhz) magnitude (db) s11 s22 gain vs. temp 1840 mhz,... |
| Description |
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| File Size |
311.82K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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