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NEC[NEC]
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| Part No. |
2SK3715
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| OCR Text |
...) = 62.5C/W 10
Rth(ch-C) = 3.13c/W 1
0.1
Single pulse 0.01 100
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D16378EJ2V0DS
3
2SK3715
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
350 Pulsed 300
FORWAR... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET
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| File Size |
98.97K /
8 Page |
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it Online |
Download Datasheet
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INTEL[Intel Corporation]
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| Part No. |
376
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| OCR Text |
...VCC VCC VCC VCC VCC Pin 11A 13A 13c 13L 1N 13N 11B 2C 1D 1M 4N 9N 11N 2A 12A 1B 13B 13M 2N 6N 12N 1L Label VCC VCC VCC VCC VCC VCC VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC
4
376 EMBEDDED PROCESSOR
The following ... |
| Description |
376TM HIGH PERFORMANCE 32-BIT EMBEDDED PROCESSOR
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| File Size |
1,275.32K /
95 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-24F
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| OCR Text |
...0
Per Unit Base Rth(j-c) = 0.13c/W (IGBT) Rth(j-c) = 0.15C/W (FWDi) Single Pulse TC = 25C
12 8 4
VCC = 600V
102
102
10-1
10-1
10-2
10-2
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 1000 2000... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
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| File Size |
92.98K /
4 Page |
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it Online |
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|
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POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CM300DU-34KA
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.13c/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4
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| Description |
Dual IGBTMOD 300 Amperes/1700 Volts
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| File Size |
482.92K /
4 Page |
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it Online |
Download Datasheet |
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|
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POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CM350DU-5F
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.13c/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.19C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
... |
| Description |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
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| File Size |
53.22K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM600HA-5F
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| OCR Text |
...C Per Unit Base = R th(j-c) = 0.13c/W
101
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.19C/W
100
100
10-1
10-1
10-2
10-2
10-3 10-3
10-2
10-1
TIME, (s)
100
101
10-3 10-3
10-2
10-1
TIME, ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
45.01K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CM600HA-5F
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| OCR Text |
...C Per Unit Base = R th(j-c) = 0.13c/W
101
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.185C/W
100
100
10-1
10-1
10-2
10-2
10-3 10-3
10-2
10-1
TIME, (s)
100
101
10-3 10-3
10-2
10-1
TIME,... |
| Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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| File Size |
51.12K /
4 Page |
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it Online |
Download Datasheet |
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