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  1200v 200a Datasheet PDF File

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    C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y

Continental Device India Limited
Part No. C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2688R CSC2688Y
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200a Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200a Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200a Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200a Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200a Ic, 100 - 200 hFE.

File Size 136.14K  /  2 Page

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    3MBI150UC-120

Fuji Electric Holdings Co., Ltd.
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. 3MBI150UC-120
Description 1200v / 150A 3 in one-package 200 A, 1200 V, N-CHANNEL IGBT
IGBT Module U-Series 1200v / 150A 3 in one-package

File Size 124.22K  /  5 Page

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    3MBI150U-120

List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Fuji Electric Holdings Co., Ltd.
Part No. 3MBI150U-120
Description IGBT Module U-Series 1200v / 150A 3 in one-package
1200v / 150A 3 in one-package 200 A, 1200 V, N-CHANNEL IGBT

File Size 114.39K  /  5 Page

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    30PRA20

ETC
NIEC[Nihon Inter Electronics Corporation]
Part No. 30PRA20
Description FRD - 3A 200a 90ns

File Size 55.20K  /  5 Page

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    NIEC[Nihon Inter Electronics Corporation]
Part No. 30PHA20
Description SBD - 3A 200a Axial

File Size 79.49K  /  6 Page

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    Soshin
Part No. NF4000C-TT NF4100C-TT NF4050C-TT
Description Large current(50 up to 200a)

File Size 158.81K  /  4 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 1N3174
Description Si Rectifier, 200a < I(O)/I(F) s 500A

File Size 106.78K  /  1 Page

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    New Jersey Semi-Conduct...
Part No. 1N3587
Description Si Rectifier, 200a < I(O)/I(F) s 500A

File Size 96.21K  /  1 Page

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    IRG4PH30 IRG4PH30K

International Rectifier, Corp.
Part No. IRG4PH30 IRG4PH30K
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条)
1200v UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

File Size 158.36K  /  8 Page

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    IRG4PH50S

IRF[International Rectifier]
Part No. IRG4PH50S
Description 1200v DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v Vce(on)typ.=1.47V @Vge=15V Ic=33A)

File Size 127.42K  /  8 Page

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