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  10-12w Datasheet PDF File

For 10-12w Found Datasheets File :: 717    Search Time::1.266ms    
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    SGW5N60RUFD SGW5N60RUFDTM

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW5N60RUFD SGW5N60RUFDTM
OCR Text ...SGW5N60RUFD 600 20 8 5 15 8 56 10 60 25 -55 to +150 -55 to +150 300 Units V V A A A A A us W W C C C Notes : (1) Repetitive rating : ...12W 0.1 1 10 100 1000 1.0 -50 0 50 100 150 0 Case Temperature, TC [] Frequency [KHz] ...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 612.68K  /  8 Page

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    SGW5N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW5N60RUF
OCR Text ...0C SGW5N60RUF 600 20 8 5 15 10 60 25 -55 to +150 -55 to +150 300 Units V V A A A us W W C C C Notes : (1) Repetitive rating : Puls...12W 0.1 1 10 100 1000 1.0 -50 0 50 100 150 0 Case Temperature, TC [] Frequency [KHz] ...
Description Short Circuit Rated IGBT

File Size 553.55K  /  7 Page

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    Matsshita / Panasonic
Part No. 2SC5597 0637
OCR Text 10.0) (6.0) (2.0) (4.0) 20.00.5 3.30.2 5.00.3 (3.0) I Features * High breakdown voltage, and high reliability through the use of ...12W (2) 0 0 25 50 75 100 125 150 PC=3.5W (3) 0.01 5 Non repetitive pulse TC=25C 1 3 10 30 100 300...
Description Power Transistors
From old datasheet system

File Size 55.60K  /  3 Page

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    STMicro
Part No. SD4590 2870 -SD4590
OCR Text ... 30 40 4.0 -- 45 -- -- -- -- 10 120 V V V V mA -- Test ed per side DYNAMIC Symbol Test Conditio ns Valu e Min. Typ. Max. Unit ...12W 6W VCE = 26V ICQ = 400mA POWER OUTPUT vs SUPPLY VOLTAGE FREQ = 900MHz ICQ = 400mA PIN INT...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION

File Size 129.07K  /  7 Page

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    Bookly
Part No. BM0210
OCR Text ...depend on the VDD and load (THD<10%) 12W @ 4ohm /+24V 6W @ 4ohm /+12V 6W @ 8ohm /+24V b=46.7mm Very slim size : 46.7mm*33mm Pin1 = Audio L input Pin2 = A-GND Pin3 = Audio R input Pin4 = +5V Pin5 = DGND (power ground) Pin6 = mute control ...
Description Audio
From old datasheet system

File Size 130.42K  /  2 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. SML9030220M SML9030-220M
OCR Text 10.41 10.92 10.41 10.67 P-CHANNEL MOS TRANSISTOR VDSS ID(cont) RDS(on) FEATURES * P CHANNEL * REPETITIVE AVALANCHE RATED 0.89 1.14...12W RD = 1.5W Turn-Off Delay Time Fall Time 1 nS SOURCE - DRAIN DIODE CHARACTERISTICS Conti...
Description P-CHANNEL MOS TRANSISTOR

File Size 19.75K  /  2 Page

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    MJE5852 MJE5850 MJE5851 ON2041

Motorola, Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Part No. MJE5852 MJE5850 MJE5851 ON2041
OCR Text ... Rating Characteristic v 10%. VCEO(sus) Symbol TJ, Tstg VCEV VEB IC ICM IB IBM PD MJE5850 Symbol RJC...12W MJE15028 0.1 F - - V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off) CIR...
Description 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
From old datasheet system

File Size 302.08K  /  8 Page

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