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  0adc Datasheet PDF File

For 0adc Found Datasheets File :: 486    Search Time::1.516ms    
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    LD1-390-R LD1-150-R LD1-270-R LD1-100-R LD1-1R0-R LD1-1R8-R LD1-4R7-R LD1-5R6-R LD1-680-R LD1-1R4-R LD1-3R9-R LD1-560-R

Cooper Bussmann, Inc.
COOPER INDUSTRIES
Part No. LD1-390-R LD1-150-R LD1-270-R LD1-100-R LD1-1R0-R LD1-1R8-R LD1-4R7-R LD1-5R6-R LD1-680-R LD1-1R4-R LD1-3R9-R LD1-560-R LD1-6R8-R LD1-180-R LD1-220-R LD1-2R7-R LD1-330-R LD1-3R3-R LD1-470-R
OCR Text ...ameters: 100khz, 0.25v r ms , 0.0adc +/-20% except for ld1-330-r to ld1-331-r and ld2-470-r to ld2-471-r which is +/-10% 2) rms current for an approximate d t of 40. it is recommended that the temperature of the part not exceed 125 3) p...
Description LD1-390-R <CA 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Metalized Drum Core Power Inductor

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    2SD2012

Micro Commercial Components
Part No. 2SD2012
OCR Text ...ent transfer ratio (i c =2.0adc, v ce =5.0vdc) 20 --- --- --- v ce(sat) collector - emitter saturation voltage (i c =2.0adc, i b =0.2adc) --- 0.4 1.0 vdc v be base - emitter saturation voltage (i c =0...
Description NPN Silicon Power Transistors

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    2SC1008-R 2SC1008-G 2SC1008-O 2SC1008-Y

Micro Commercial Components
Part No. 2SC1008-R 2SC1008-G 2SC1008-O 2SC1008-Y
OCR Text ...f current (v cb =60vdc, i e =0adc) 0.1 uadc i ebo emitter cutoff current (v eb =5.0vdc, i c =0adc) 0.1 uadc on characteristics h fe dc current gain* (i c =50madc, v ce =2.0vdc) 40 400 v ce(sat) col...
Description NPN Silicon Epitaxial Transistor

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    Solid State Devices, Inc.
SOLID STATE DEVICES INC
Part No. SDR951S1 SDR950S1
OCR Text ... forward voltage drop ( if= 5 0adc, t a = 100 oc, 300 m s ec pulse) (if= 5 0adc, t a = - 55oc, 300 m sec pulse) v f 2 ?? 0.95 1.20 volts reverse leakage current (rated v r , t a = 25oc, 300 m s ec pulse minimu...
Description 60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier 60 A, 150 V, SILICON, RECTIFIER DIODE
60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier 60 A, 100 V, SILICON, RECTIFIER DIODE

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    POE26W3.3VS10-R

Cooper Bussmann, Inc.
Part No. POE26W3.3VS10-R
OCR Text ...arameters: 100khz, 0.100vrms, 0.0adc (2) dcr limits maximum @ 20c (3) leakage inductance 300khz, 0.01vrms, 0.0adc mechanical diagram dimensions top view front view recommended pcb layout poe 1 7 6 12 white dot pin #1 a b d (12 plcs) c h (12...
Description 26 W, SMPS TRANSFORMER ROHS COMPLIANT

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    BD435 BD433 BD437

Micro Commercial Components
Micro Commercial Compon...
Part No. BD435 BD433 BD437
OCR Text ... saturation voltage (i c =2.0adc, i b =0.2adc) bd433/bd435 bd437 0.5 0.6 --- --- vdc v be base-emitter voltage (v ce =1.0vdc,i c =2.0adc) bd433/bd435 bd437 1.1 1.2 --- --- ...
Description NPN Silicon Power Transistors

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    KSD1616-L KSD1616-Y KSD1616A-G KSD1616-G KSD1616A-Y

http://
Micro Commercial Components
Part No. KSD1616-L KSD1616-Y KSD1616A-G KSD1616-G KSD1616A-Y
OCR Text ...t gain (v ce =2.0vdc, i c =1.0adc) 81 --- --- --- v ce(sat) collector- emitter saturation voltage (2) (i c =1.0adc, i b =50madc) --- 0.15 0.3 vdc v be(sat) base- emitter saturation voltage (2) (i c =1.5adc, i b =75madc) --- 0.9 1.2...
Description NPN Silicon Epitaxial Transistors

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    BC869 BC869-16

http://
Micro Commercial Components
Part No. BC869 BC869-16
OCR Text ...0madc) (v ce =1.0vdc, i c =1.0adc) 50 100 60 --- --- --- --- 375 --- --- v ce(sat) collector- emitter saturation voltage (i c =1.0adc,i b =100madc) --- --- 500 mvdc f t transition frequency (v ce =5.0vdc, i c =10madc, f=100mhz) 40 ...
Description PNP Medium Power Transistors

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    2SC945-GR 2SC945-Y

Micro Commercial Components
Part No. 2SC945-GR 2SC945-Y
OCR Text ...toff current (v cb =60vdc, i e =0adc) 0.1 uadc i cer collector cutoff current (v ce =55vdc, r=10m ohm) 0.1 uadc i ebo emitter cutoff current (v eb =5.0vdc, i c =0adc) 0.1 uadc on characteristics h fe(1) dc current gain (i c =1.0madc, v ce...
Description NPN Silicon Plastic-Encapsulate Transistor

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    MMBT945-H MMBT945-L MMBT945-H-TP

Micro Commercial Components
Part No. MMBT945-H MMBT945-L MMBT945-H-TP
OCR Text ...toff current (v cb =60vdc, i e =0adc) 0.1 uadc i cer collector cutoff current (v ce =55vdc, r=10m ohm) 0.1 uadc i ebo emitter cutoff current (v eb =5.0vdc, i c =0adc) 0.1 uadc on characteristics h fe(1) dc current gain (i c =1.0madc, v ce...
Description NPN Silicon Plastic-Encapsulate Transistor
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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