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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S803BTL
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| OCR Text |
...u0 ~ u7 sdram u0 ~ u7 clk2/3 10 w dqn every dqpin of sdram u0/u2 u1/u3 10 w 10 w clk0/1 10 w 10 pf u4/u6 u5/u7 dqm0 dq0 dq1 dq2 dq3 dq4 dq5 ...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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| File Size |
142.45K /
13 Page |
View
it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd.
|
| Part No. |
KMM366S824BTL
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| OCR Text |
...m cs udqm clk2/3 u0/u4 u1/u5 10 w 10 w clk0/1 10 w 10 pf dqm6 cs2 dqm2 dqm3 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u1 dq16 dq17 dq18 dq19 dq20 dq21...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
|
| File Size |
143.42K /
13 Page |
View
it Online |
Download Datasheet
|
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