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    2SK3982-01MR

Fuji Electric
Part No. 2SK3982-01MR
OCR Text ...to ambient 3.906 58.0 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd trr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage cur...
Description N-CHANNEL SILICON POwER MOSFET

File Size 219.92K  /  4 Page

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    PI3106-01-HVIZ PI310601

Vicor Corporation
Part No. PI3106-01-HVIZ PI310601
OCR Text ...idling power p idle 3.8 w v in = 24v, i out = 0a input standby power p sby 0.225 w v in = 24v, enable = 0v input curren...th , 2012 page 5 of 15 electrical specifications (continued) unless otherwise specified: 18...
Description 18-36V Input, 12V / 4.2A / 50w Output Very High Density Isolated DC-DC Converter (334w/in3)

File Size 549.20K  /  15 Page

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    Philips
Part No. PHP174NQ04LT
OCR Text ... 40 v n i d 75 a n p tot 250 w n r dson 4m w . table 1: pinning - sot78 (to-220ab) and sot404 (d 2 -pak), simpli?ed outline and symbol p...th(j-mb) thermal resistance from junction to mounting base figure 4 - - 0.6 k/w r th(j-a) thermal re...
Description N-channel Trenchmos (tm) logic level FET

File Size 87.14K  /  13 Page

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    Philips
Part No. PHB174NQ04LT
OCR Text ... 40 v n i d 75 a n p tot 250 w n r dson 4m w . table 1: pinning - sot78 (to-220ab) and sot404 (d 2 -pak), simpli?ed outline and symbol p...th(j-mb) thermal resistance from junction to mounting base figure 4 - - 0.6 k/w r th(j-a) thermal re...
Description N-channel Trenchmos (tm) logic level FET

File Size 87.14K  /  13 Page

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    IXYS CORP
Part No. DK950-14N1w
OCR Text ...o water - - 0.09 single diode k/w f 1 mounting force (to heatsink) 4.25 - 5.75 nm f 2 mounting force (to terminals) 10.2 - 13.8 2) nm w t we...th av t t t r t w ? = ? ? = max where v t0 =0.75v, r t =0.2m ?, r th = supplementary thermal impeda...
Description 1129 A, 1400 V, SILICON, RECTIFIER DIODE

File Size 322.05K  /  9 Page

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    PSMN014-40YS

NXP Semiconductors
Part No. PSMN014-40YS
OCR Text ...yp Max 40 46 56 175 21 Unit V A w C mJ drain-source voltage Tj 25 C; Tj 175 C drain current total power dissipation junction temperature S...th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Condition...
Description N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
N-channel LFPAK 40 V, 14 m楼? standard level MOSFET

File Size 231.50K  /  15 Page

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    PSMN015-60PS

NXP Semiconductors
Part No. PSMN015-60PS
OCR Text ...yp Max 60 50 86 175 44 Unit V A w C mJ drain-source voltage Tj 25 C; Tj 175 C drain current total power dissipation junction temperature S...th) VGSth Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Con...
Description N-channel 60 V 14.8 mΩ standard level MOSFET
N-channel 60 V 14.8 m楼? standard level MOSFET

File Size 223.24K  /  14 Page

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    MTP4835V8

Cystech Electonics Corp.
Part No. MTP4835V8
OCR Text ...0 : p d 1.6 *3 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data ...th,j-c 4.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c...
Description P-Channel Enhancement Mode Power MOSFET

File Size 318.08K  /  9 Page

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    QRP1240R30 QRC1240R30 QRM1240R30 QRJ1240R30

Powerex Power Semiconductors
Powerex Power Semicondu...
Part No. QRP1240R30 QRC1240R30 QRM1240R30 QRJ1240R30
OCR Text ...c) q per diode 0.075 c/w contact thermal resistance, case to sink r th(c-s) per module 0.05 c/w (lubricated)* *t c , t f measured point is just under the chip. qr_1240r30 super fast recovery dual diode modules 280 ...
Description Super Fast Recovery Diode Modules 280 Amperes/1200 Volts
   Super Fast Recovery Diode Modules 280 Amperes/1200 Volts

File Size 373.50K  /  3 Page

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    MTP4835L3

Cystech Electonics Corp.
Part No. MTP4835L3
OCR Text ...25 3.3 pd w total power dissipation @t a =100 1.65 operating junction and storage te mperature range tj, tstg -55...th,j-c 25 c/w thermal resistance, junction-to-ambient, max r th,j-a 45 (note) ...
Description P-Channel Logic Level Enhancement Mode Power MOSFET

File Size 293.03K  /  8 Page

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