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				MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
Part No.	DS1302 DS1302N DS1302S DS1302S-16 DS1302SN DS1302SN-16 DS1302Z DS1302ZN
OCR Text	...th leap year compensation valid up to 2100 31 x 8 RAM for scratchpad data storage Serial I/O for minimum pin count 2.0-5.5V full operation Uses less than 300 nA at 2.0V Single-byte or multiple-byte (burst mode) data transfer for read or wri...
Description	0 TIMER(S), REAL TIME CLOCK, PDSO8 Trickle Charge Timekeeping Chip 0 TIMER(S), REAL TIME CLOCK, PDIP8
File Size	215.68K / 14 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
Part No.	DS1742 DS1742-100 DS1742-70 DS1742W-120 DS1742W-150
OCR Text	...ic leap year compensation valid up to the year 2100 Battery voltage level indicator flag Power-fail write protection allows for 10% VCC power supply tolerance Lithium energy source is electrically disconnected to retain freshness until powe...
Description	Y2KC Nonvolatile Timekeeping RAM
File Size	161.94K / 12 Page	View it Online	Download Datasheet

				Elantec Semiconductor
Part No.	EL6295CJ EL6265C
OCR Text	... DVD, or other photo diode pick-up applications. Two TTL/CMOS compatible inputs select the gain for all eight amplifiers. The gain settings ...to channel. An auto-zero input brought high after power up reduces the output offsets to less than 1...
Description	13 Channel, 60MHz, Switched Gain Pre-Amp
File Size	140.36K / 2 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI HY62WT08081E-DTC HY62WT08081E-DTE HY62WT08081E-DTI HY62WT0808 HY62WT08081E-DG70C
OCR Text	...tage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. FEATURES * * * * Fully static operation and Tri-state output TTL...
Description	HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM
File Size	202.96K / 13 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG
OCR Text	...nts to support the battery back-up function. When a power down or power failure occurs, internal logic switches the on-chip counters to battery backup operation. Read/write functions become disabled and operation is limited to time-keeping ...
Description	Microprocessor-Compatible, Real-Time Clock
File Size	77.04K / 13 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...able of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low intern...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...able of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low interna...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...able of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low intern...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	... to be kept at VIL during power-up and power-down and recovery time of minimum 1s is required before internal circuit gets ready for any com...to be kept at VIL during power-up and power-down and recovery time of minimum 10s is required before...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...tions. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 32 pages formed by two NAND structures, totaling 8,448 NAND struc...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

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