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substrates. Datasheet PDF File

For substrates. Found Datasheets File :: 1527 Search Time::1.297ms
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				Hittite Microwave Corporation
Part No.	HMC59209
OCR Text	... mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surf...
Description	GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz
File Size	290.19K / 8 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC659
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
File Size	317.01K / 8 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC56409
OCR Text	... mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surfac...
Description	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz
File Size	234.69K / 6 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC460
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz
File Size	278.40K / 8 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC462
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
File Size	190.85K / 6 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC463
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz
File Size	275.75K / 8 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC464
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz
File Size	230.46K / 6 Page	View it Online	Download Datasheet

				美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC465
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz
File Size	285.41K / 8 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC490
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 17 GHz GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz
File Size	214.90K / 8 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC498
OCR Text	...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description	GaAs PHEMT MMIC POWER AMPLIFIER/ 17 - 24 GHz GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz
File Size	207.55K / 8 Page	View it Online	Download Datasheet

For substrates. Found Datasheets File :: 1527 Search Time::1.297ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |