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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN26A030MK EGN26A030MK
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| OCR Text |
...re
r P
im l e
Condition
RG=15 RG=15 Vp VGDO P3dB d GL Rth
VDS VGS Tc=25oC Pt Tstg Tch
ry a in
Rating Unit
V V W oC oC 120 ...179.4 0 3.9 0.920 152.0 0.484 168.0 0.007 91.7 0.898 179.0 4.0 0.916 149.7 0.437 164.0 0.009 87.0 0.... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
99.98K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN35A180IV
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| OCR Text |
...F IGR Tch
im l e
Condition
RG=2 RG=2 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <TBD >-7.2 200
120 -5 281.25 -65 to +175 250
...179.4 0.824 171.3 0.795 162.6 0.737 153.0 0.644 143.1 0.524 134.0 0.388 126.6 0.242 125.0 0.133 148.... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
103.92K /
4 Page |
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it Online |
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NEC[NEC]
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| Part No. |
2SC4885
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| OCR Text |
...z
NV
VTVM.
B
M D
RG = 100 k
1 - + 1 mA
47 F
G = 80 dB -15 V FLAT
VCE = 5 V, IC = 1 mA, RG = 100 k, G = 80 dB, FL...179.6
175.3 170.4 165.9 161.9 157.6 154.1 150.6 146.9 143.8 140.5 137.5 134.6 131.7 129.1 126.2 123... |
| Description |
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD
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| File Size |
80.46K /
12 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2021-01
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| OCR Text |
...Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2021-01
vi
-
VvAC@HUApryy SrsrrprAQyhr
Ls
Rp, Cp
Rs
Source Gate ...179.34 4.639 44.75 -28.958 -1.61 -8.306 -108.07 10.5 -0.907 179.73 4.198 42.12 -29.044 -1.85 -8.039 ... |
| Description |
DC-12 GHz Discrete Power pHEMT
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| File Size |
161.45K /
8 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
PF0414B PF0414
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| OCR Text |
...VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 , Tc = 25C Pin = 0 dBm, VDD = 3.0 V, VAPC = 2.2 V, RL = Rg = 50 , Tc = 85C Pin = 0 dBm, VDD = 3.5 V,...179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Euro... |
| Description |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
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| File Size |
25.15K /
4 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
PF0414 PF0414A
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| OCR Text |
..., VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 , Tc = 80C Pin = 2 mW, VDD = 4.8 V, VAP...179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Euro... |
| Description |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
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| File Size |
31.79K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
PF0415 PF0415A
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| OCR Text |
..., VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 , Tc = 25C Pin = 2 mW, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 , Tc = 80C Pin = 2 mW, VDD =4.8 V, VAPC...179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Euro... |
| Description |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
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| File Size |
31.79K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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