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    KMM53232004BK KMM53232004BKG

Samsung semiconductor
Part No. KMM53232004BK KMM53232004BKG
OCR Text refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004B ...4k cycles/64ms Ref, SOJ, Solder) - KMM53232004BKG(4k cycles/64ms Ref, SOJ, Gold) * Extended Data Out...
Description 32M x 32 DRAM SIMM Using 16Mx4, 4k refresh, 5V

File Size 416.12K  /  19 Page

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    PROMOS TECHNOLOGIES INC
Part No. V55C3256164VBUG10 V55C3256164VBUK7E V55C3256164VBUK7PC
OCR Text ...end mode deep power mode auto refresh and self refresh refresh interval: 8192 cycles/64 ms available in 54-ball fbga, with 9x6 ball arra...4k : 6516 pc : cl2 type 32mx4, 4k : 12840 8mx16, 4k : 12816 blank: cl3 54 : sdram 16mx8, 4k : 12880 ...
Description SYNCHRONOUS DRAM, PBGA54

File Size 547.81K  /  46 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M374F3200DJ1-C M374F3280DJ1-C
OCR Text refresh, 3.3V GENERAL DESCRIPTION The Samsung M374F320(8)0DJ1-C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung M374F3...4k 8K CBR ref. ROR ref. 4k/64ms 4k/64ms 8K/64ms PERFORMANCE RANGE Speed -C50 -C60 tRAC 50...
Description 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4k & 8K refresh, 3.3V

File Size 331.11K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364003CSW KMM5364003CSWG
OCR Text ...ing 4mx16 & quad cas 4mx4, 4k refresh, 5v the samsung kmm5364003c is a 4mx36bits dynamic ram high density memory module. the samsung kmm5364003c consists of two cmos 4mx16bits and one cmos quad cas 4mx4bits drams in tsop packages mounte...
Description 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4k refresh, 5V

File Size 386.23K  /  20 Page

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    K4F640412D K4F660412D

SAMSUNG[Samsung semiconductor]
Part No. K4F640412D K4F660412D
OCR Text ...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh ...
Description 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 366.75K  /  20 Page

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    K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
OCR Text ...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidde...
Description 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns

File Size 366.42K  /  20 Page

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    K4F640812D K4F660812D K4F640812D-JCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640812D K4F660812D K4F640812D-JCL
OCR Text ...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh ...
Description 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4k refresh cycle.

File Size 367.41K  /  20 Page

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