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NXP Semiconductors N.V.
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| Part No. |
BUK9840-56
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| OCR Text |
...i f /dt = 100 a/ m s; - 45 - ns q rr reverse recovery charge v gs = -10 v; v r = 30 v - .3 - m c january 1998 2 rev 1.000
philips semico...fet avalanche limiting value symbol parameter conditions min. typ. max. unit w dss drain-source non-... |
| Description |
TrenchMOS锛?M锛?ransistor Logic level FET(TrenchMOS锛?M锛??浣???昏??靛钩FET)
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| File Size |
74.18K /
9 Page |
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NXP Semiconductors N.V.
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| Part No. |
BUK9E4R4-40B
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| OCR Text |
...--961mj dynamic characteristics q gd gate-drain charge v gs =5v; i d =25a; v ds =32v; t j =25c; see figure 13 -24-nc table 1. quick refere...fet 4. limiting values [1] continuous current is limited by package. [2] current is limited by pow... |
| Description |
N-channel TrenchMOS logic level FET
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| File Size |
171.00K /
14 Page |
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it Online |
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NXP
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| Part No. |
PH2625L
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| OCR Text |
...rs. n v ds 25 v n i d 100 a n q gd = 7.3 nc (typ) n q g(tot) = 32 nc (typ) n r dson 2.8 m w (v gs =10v) n r dson 4.1 m w (v gs = 4.5 v...fet 3. ordering information 4. limiting values [1] duty cycle is limited by the maximum junction tem... |
| Description |
N-channel TrenchMOS-TM logic level FET
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| File Size |
146.21K /
13 Page |
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it Online |
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SeCoS
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| Part No. |
SSG9435
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| OCR Text |
... s i m p l e d r i v e r e q u i r e m e n t t o t a l p o w e r d i s s i p a t i o n l i n e a r d e r a t i n g f a c t o r ...fet e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h ... |
| Description |
P-Channel Enhancement Mode Power MosFET
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| File Size |
326.89K /
5 Page |
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it Online |
Download Datasheet |
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