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For pout Found Datasheets File :: 10830 Search Time::2.328ms
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				MOTOROLA[Motorola, Inc]
Part No.	MRF174
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 125 W, f = 150 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 Vdc, pout = 125 W, f = 150 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 125 W, f = 150 MHz, IDQ = 100 mA, VSWR 30:1 at all...
Description	N-CHANNEL MOS BROADBAND RF POWER FET
File Size	166.51K / 10 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...ource Power Gain (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA, VSWR 30:1 at all...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 100 W, f = 225 MHz, IDQ = 100 mA, VSWR 30:1 at all...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...ource Power Gain (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 50 Vdc, pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	...ource Power Gain (VDD = 28 Vdc, pout = 100 W, f = 400 MHz, IDQ = 200 mA) Drain Efficiency (VDD = 28 Vdc, pout = 100 W, f = 400 MHz, IDQ = 200 mA) Electrical Ruggedness (VDD = 28 Vdc, pout = 100 W, f = 400 MHz, IDQ = 200 mA, Load VSWR = 30:1...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	... 14 200 mA 13 12 11 10 0.1 1 10 pout, OUTPUT POWER (WATTS) 100 mA VDD = 26 Vdc f = 1840 MHz T = 25_C 100 IDQ = 400 mA G ps , POWER GAIN (dB) 300 mA 16 15 14 13 12 11 10 9 24 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 26 28 30 32 34 36 38 40 ...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	... Return Loss (2) (VDD = 26 Vdc, pout = 60 W CW, IDQ = 500 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 11.5 43 IRL -- 45 -- -- -10 dB 1...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

For pout Found Datasheets File :: 10830 Search Time::2.328ms
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