Part Number Hot Search : 
M35V6 H5008 5C3V9 NE555 0061H 24C04W 0061H 1N5249C
Product Description
Full Text Search
  polysilicon Datasheet PDF File

For polysilicon Found Datasheets File :: 1408    Search Time::1.734ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100

JFETs
IXYS[IXYS Corporation]
Part No. IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100
OCR Text ...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol...
Description    MegaMOSFET
Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No
Receiver IC; Package/Case:28-TSSOP; Current Rating:2.8mA; Interface Type:Serial; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount; Voltage Rating:3.3V RoHS Compliant: No
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, UART, USB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes
IC ARM920T MCU 200MHZ 272-TFBGA
1000V HiPerFET power MOSFET

File Size 110.59K  /  4 Page

View it Online

Download Datasheet





    IXTN21N100 IXTK21N100

IXYS[IXYS Corporation]
Part No. IXTN21N100 IXTK21N100
OCR Text ...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance l l l l l l l l l l l l l l l Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2 ...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs

File Size 136.10K  /  4 Page

View it Online

Download Datasheet

    IXTT10P50 IXTT11P50 IXTH10P50 IXTH11P50

IXYS[IXYS Corporation]
Part No. IXTT10P50 IXTT11P50 IXTH10P50 IXTH11P50
OCR Text ...RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Cond...
Description Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

File Size 120.75K  /  2 Page

View it Online

Download Datasheet

    STP38N06 3645

STMICROELECTRONICS[STMicroelectronics]
Part No. STP38N06 3645
OCR Text ...7n *RESISTA NCE O F T HE G AT E polysilicon RG 12 16 1 *EPY AND DRIF T RESISTANCES RD 13 14 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0 1e-3 *CAPACITANCE G ATE SO URCE CGS 16 11 1.90n *OPT IO NAL FO R NEGAT IVE GATE BIAS *S2 51 11 11...
Description N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

File Size 132.70K  /  11 Page

View it Online

Download Datasheet

    STP40N03L-20 4886

ST Microelectronics
STMicroelectronics
Part No. STP40N03L-20 4886
OCR Text ...7n *RESISTA NCE O F T HE G AT E polysilicon RG 12 16 1 *EPY AND DRIF T RESISTANCES RD 13 14 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0 1e-3 *CAPACITANCE G ATE SO URCE CGS 16 11 1.90n *OPT IO NAL FO R NEGAT IVE GATE BIAS *S2 51 11 11...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR

File Size 64.40K  /  7 Page

View it Online

Download Datasheet

    IXFT6N100F 6N100F IXFH6N100F

IXYS[IXYS Corporation]
Part No. IXFT6N100F 6N100F IXFH6N100F
OCR Text ...for low gate resistance Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and res...
Description Power MOSFETs

File Size 190.52K  /  4 Page

View it Online

Download Datasheet

    TCC20L25 SD1855 2854

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. TCC20L25 SD1855 2854
OCR Text ...rt uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD1855 can be used for applications sucha as telecommunications, radar, ECM, space and other commercial and military systems. ABSOLU...
Description GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

File Size 50.86K  /  3 Page

View it Online

Download Datasheet

    M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M5M51008BKR-55LL M5M51008BKR-70L M5M51008BKR-70LL M5M51008BP M5M51008BP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M5M51008BKR-55LL M5M51008BKR-70L M5M51008BKR-70LL M5M51008BP M5M51008BP-10L M5M51008BP-10LL M5M51008BP-55L M5M51008BP-55LL M5M51008BP-70L M5M51008BP-70LL M5M51008FP-10L M5M51008FP-10LL M5M51008FP-55L M5M51008FP-55LL M5M51008FP-70L M5M51008FP-70LL M5M51008KR-10L M5M51008KR-10LL M5M51008KR-55L M5M51008KR-55LL M5M51008KR-70L M5M51008KR-70LL M5M51008KV-10L M5M51008KV-10LL M5M51008KV-55L M5M51008KV-55LL M5M51008KV-70L M5M51008KV-70LL M5M51008RV-10L M5M51008RV-10LL M5M51008RV-55L M5M51008RV-55LL M5M51008RV-70L M5M51008RV-70LL M5M51008VP-10L M5M51008VP-10LL M5M51008VP-55L M5M51008VP-55LL M5M51008VP-70L M5M51008VP-70LL M5M51015KR-10LL M5M51015KR-70LL M5M51015KR-55LL M5M51015KR-10L M5M51010VP M5M51013KR-55L M5M51009FP M5M51014KR-70L M5M51011RV M5M51008BRV-70L M5M51008BKV-10L M5M51008BKV-10LL M5M51008BVP-10L M5M51008BVP-55LL
OCR Text ...d using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the...
Description 128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32

File Size 60.02K  /  7 Page

View it Online

Download Datasheet

For polysilicon Found Datasheets File :: 1408    Search Time::1.734ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of polysilicon

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.3676269054413