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INTERSIL[Intersil Corporation]
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Part No. |
HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
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OCR Text |
...t Switching SOA Gate to Emitter plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP QG(ON)
IC = 45A, VCE = VGE VGE = 20V TJ = 150oC, RG = 25, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 5A, VCE = 0.5 BVCES IC = 5A, VCE = 0.5 BVCE... |
Description |
From old datasheet system 21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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File Size |
88.17K /
7 Page |
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it Online |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MTP23P06V ON2569
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OCR Text |
...onstant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG - VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = t... |
Description |
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
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File Size |
192.44K /
8 Page |
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it Online |
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