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Solidtron
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Part No. |
SmctTA65N14A10
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OCR Text |
...e of gate return bond area. the mct was designed for high di/dt applications. an independent cathode connection or "gate return bond area" was provided to minimize the effects of rapidly changing anode-cathode current on the gate control ... |
Description |
Power Management
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File Size |
208.69K /
5 Page |
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it Online |
Download Datasheet
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Solidtron
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Part No. |
SmctTA32N14A10
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OCR Text |
...e of gate return bond area. the mct was designed for high di/dt applications. an independent cathode connection or "gate return bond area" was provided to minimize the effects of rapidly changing anode-cathode current on the gate control ... |
Description |
Advanced Pulse Power Device N-MOS VCS
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File Size |
703.62K /
5 Page |
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it Online |
Download Datasheet
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Solidtron
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Part No. |
SmctTA20N20A10
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OCR Text |
...t (<10nh) and a smctta32n14a10 mct. smct ta20n20a10 devices do not produce ringing waveforms l v gk is held positive until i a oscillations have ended ( i a =0). supply voltage l series (total) dut r sense = 0.010 w c=0.2uf + -... |
Description |
Power Management
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File Size |
145.02K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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