| |
|
 |
http://
IXYS[IXYS Corporation]
|
| Part No. |
FII50-12E
|
| OCR Text |
isoplus i4-PACTM
IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V
3 5 4 1
1 5
2
IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 1... |
| Description |
NPT IGBT phaseleg
IGBT Discretes
|
| File Size |
75.45K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| Part No. |
FMD40-06KC
|
| OCR Text |
...FETs
-Boost Chopper Topologyin isoplus i4-PACTM
3
4 1 2
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25C TC = 90C Conditions TVJ = 25C to 150C Maximum Ratings 600 20 38 25 V V A A
Features * fast CoolMOS power MOSFET - 3rd genera... |
| Description |
HiPerFET Power MOSFETs -Boost Chopper Topology in isoplus i4-PAC 38 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
| File Size |
45.63K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
FMK75-01F
|
| OCR Text |
isoplus i4-PACTM
Preliminary data
3 5 4 1 2
T2 T1
ID25 = 75 A = 100 V VDSS RDSon typ. = 18 m
1 5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Symbol TC = 25C TC = 90C (body diode) TC = 25C (body diode) TC = 90C VD... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
|
| File Size |
59.66K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
FMM200-004PL
|
| OCR Text |
isoplus i4-PACTM
Preliminary data
3
T1
ID25 = 200 A = 40 V VDSS RDSon typ. = 2.8 m
5 4 1 2
T2
1
5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C (body diode) TC = 25C (body diode) TC = 90C Conditions ... |
| Description |
MOSFET Modules
Trench Power MOSFET
|
| File Size |
41.44K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
FMM75-01F
|
| OCR Text |
isoplus i4-PACTM
Preliminary data
3 5 4 1 2
T2 T1
ID25 = 75 A = 100 V VDSS RDSon typ. = 18 m
1 5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Symbol TC = 25C TC = 90C (body diode) TC = 25C (body diode) TC = 90C VD... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in isoplus i4-PACTM
From old datasheet system
|
| File Size |
41.84K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| Part No. |
FUE30-12N1
|
| OCR Text |
isoplus i4-PACTM
1
VRRM = 1200 V ID(AV)M = 30 A trr = 130 ns
3 4 5
1 5
2
Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM EAS Ptot TC = 90C; sine 180 (per diode) TC = 90C (bridge) TVJ = 25C; t = 10 ms; sine 50 Hz IAS= 9 A; LAS... |
| Description |
Fast Three Phase Rectifier Bridge in isoplus i4-PACTM
Fast Three Phase Rectifier Bridge in isoplus i4-PACTM 3 PHASE, 30 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
| File Size |
62.47K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| Part No. |
FUO22-12N FUO22-16N
|
| OCR Text |
isoplus i4-PACTM
FUO 22-12N
VRRM = 1200 V ID(AV)M = 27 A IFSM = 100 A
Preliminary Data
1 5
Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot TC = 90C; sine 180 (per diode) TC = 90C TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C ... |
| Description |
Three Phase Rectifier Bridge in isoplus i4-PACTM 3 PHASE, 28 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
| File Size |
30.56K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXDR30N120D1 IXDR30N120
|
| OCR Text |
...= 50 A = 2.4 V
C G G
C
isoplus 247TM E153432
G C E
E
E
Isolated Backside* G = Gate C = Collector E = Emitter
IXDR 30N120
IXDR 30N120 D1
*Patent pending
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA... |
| Description |
High Voltage IGBT with optional Diode isoplusTM package
|
| File Size |
67.58K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXFR44N60
|
| OCR Text |
...+150 V V V V A A A mJ J V/ns
isoplus 247TM E153432
G = Gate S = Source * Patent pending
D = Drain
Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs isoplus247
|
| File Size |
33.64K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
