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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STL120NH02V L120NH02V
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| OCR Text |
...acteristics
Table 6.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 28A, VGS = 0 TBD TBD TBD TBD TBD TBD Test conditions... |
| Description |
N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET
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| File Size |
217.23K /
10 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STL50NH3LL_0609 STL50NH3LL
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| OCR Text |
...ns ns ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current IS... |
| Description |
N-channel 30V - 0.011ohm - 13A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET
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| File Size |
323.60K /
12 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
STL5NK65Z L5NK65Z
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| OCR Text |
... limited by safe operating area ISD<4.2A, di/dt<300A/s, VDD<V(BR)DSS , TJ<TJMAX
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avala...1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 50A VGS = 10V... |
| Description |
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1.5ohm - 4.2A的PowerFLAT⑩齐保护SuperMESH⑩功率MOSFET
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| File Size |
118.77K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STL80N4LLF3 L80N4LLF3
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| OCR Text |
...ns ns ns ns
Table 6.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS = 0 ... |
| Description |
N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion
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| File Size |
322.15K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
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| Part No. |
STB75NF75L STB75NF75L-1 STP75NF75L P75NF STB75NF75LT4
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| OCR Text |
...ting area. April 2002
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(1) ISD 75A, di/dt 500A/s, VDD V (BR)DSS, Tj T JMAX. (2) Starting T j = 25 oC, ID = 37.5A, VDD = 30V
1/11
STB75NF75L/-1 STP75NF75L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case T... |
| Description |
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
N-CHANNEL 75V - 0.009 OHM - 75A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFETII POWER MOSFET
75 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
381.01K /
11 Page |
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ST Microelectronics
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| Part No. |
STW8NB100
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| OCR Text |
...190 1.52 3.5 -65 to 150 150
(1)ISD 7.3A, di/dt 200A/s, VDD V (BR)DSS, T j TJMAX.
Unit V V V A A A W W/C V/ns C C 1/8
(*)Pulse width limited by safe operating area
STW8NB100
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance... |
| Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
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| File Size |
253.36K /
9 Page |
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