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  interterminal Datasheet PDF File

For interterminal Found Datasheets File :: 616    Search Time::2.313ms    
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    FC903 FC903-TR-E

ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
Part No. FC903 FC903-TR-E
OCR Text ... V A A pF ns Reverse Current interterminal Capacitance Reverse Recovery Time 1.2 0.1 0.5 3.0 4.0 Note : The specifications shown above are for each individual diode. trr Test Circuit 0.01 F 0 50ns 50 2k D.U.T IF=10mA 50 Irp trr ...
Description 0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
   High-Speed Switching Composite Diode

File Size 21.60K  /  2 Page

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    SANYO
Part No. GMA01U
OCR Text ...er dissipation : P=300mW max. * interterminal capacitance : c=3.0pF max. * Reverse recovery time : trr=4.0ns max. * Small size, being about half of DO-35 package heretofore in use. Package Dimensions unit:mm 1114 [GMA01, 0U] Specifi...
Description Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications

File Size 37.99K  /  2 Page

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    Sanyo Semiconductor
Part No. SB005W03-E
OCR Text ...Forward Voltage Reverse Current interterminal Capacitance Reverse Recovery Time Symbol VR VF IR C trr IR=20A IF=50mA VR=15V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit. 2.6 10 Conditions Ratings min 30 0.55 5 typ max Unit V V A pF...
Description DIODE SCHOTTKY 30V 0.05A 3SMCP

File Size 25.80K  /  3 Page

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    SBR200-10JS

Sanyo Semicon Device
Part No. SBR200-10JS
OCR Text ...Forward Voltage Reverse Current interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25C* IF=10A, Tj=25C* VR=100V, Tj=25C* VR=10V, Tj=25C* Junction-Case : Smoothed DC Ratings min 100 0.88 1 280 3.5 t...
Description Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier

File Size 42.35K  /  3 Page

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    SBR200-10G

Sanyo Semicon Device
Part No. SBR200-10G
OCR Text ...Forward Voltage Reverse Current interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25C* IF=10A, Tj=25C* VR=100V, Tj=25C* VR=10V, Tj=25C* Junction-Case : Smoothed DC Ratings min 100 0.88 1 280 2.3 t...
Description Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier

File Size 42.19K  /  3 Page

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    SANYO
Part No. CPH5819
OCR Text ...se current i r v r =10v 200 m a interterminal capacitance c v r =10v, f=1mhz cycle 20 pf reverse recovery time t rr i f =i r =100ma 10 ns electrical connection switching time test circuit t rr test circuit [mosfet] [sbd] duty 10% 50 100 ...
Description Nch SBD

File Size 52.43K  /  5 Page

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    1SV251

Sanyo Semicon Device
Part No. 1SV251
OCR Text ...ent to be made smaller. * Small interterminal capacitance (C=0.23pF typ). * Small forward series resistance (rs=4.5 max). Package Dimensions unit:mm 1251A [1SV251] 1:Anode 2:Cathode 3:Cathode, Anode SANYO:CP Specifications Absol...
Description PIN Diode for VHF, UHF, AGC Applications

File Size 59.48K  /  3 Page

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    CPH5863

Sanyo Semicon Device
Part No. CPH5863
OCR Text ...Forward Voltage Reverse Current interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300A IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 30 0.55 80 25 10 V V A pF ns V(BR)DSS IDSS IGSS VGS(off)...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 57.90K  /  5 Page

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    CPH5862

Sanyo Semicon Device
Part No. CPH5862
OCR Text ...Forward Voltage Reverse Current interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300A IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 30 0.55 80 25 10 V V A pF ns V(BR)DSS IDSS IGSS VGS(off)...
Description MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

File Size 57.19K  /  5 Page

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