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For intensive-contact Found Datasheets File :: 473    Search Time::1.016ms    
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    Samsung
Part No. K9F1G08U0M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F1GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an opt...
Description IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 475.80K  /  39 Page

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    Motorola
Part No. MPC7410PCPNS
OCR Text ...dec application that is altivec intensive. 4. these values include the use of altivec. without altivec operation, estimate a 25% decrease. table 5. clock ac timing specifications at recommended operating conditions (see table 3.) c...
Description MPC7410 Part Number Specifications for the RXxxxPC Series

File Size 86.76K  /  12 Page

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    Samsung Electronics
Part No. K9F1G08R0B
OCR Text ...rgining of data. even the write-intensive systems can take advantage of the k9f1g08r0b extended reliability of 100k program/ erase cycles by providing ecc( error correcting code) with real time mapping-out algorithm. the k9f1g08r0b is an ...
Description FLASH MEMORY

File Size 740.08K  /  34 Page

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    K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-

SAMSUNG[Samsung semiconductor]
Part No. K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616U0C-Y
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F56XXX0Cs extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. COMMAND SETS Function Read 1 Read 2 Read ID Reset Page Program Co...
Description 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

File Size 668.51K  /  41 Page

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    K9F5608U0D K9F5608D0D-FCB0 K9F5608D0D-FIB0 K9F5608D0D-JCB0 K9F5608U0D-XCB0 K9F5608D0D K9F5608D0D-J K9F5608D0D-JIB0 K9F56

SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0D K9F5608D0D-FCB0 K9F5608D0D-FIB0 K9F5608D0D-JCB0 K9F5608U0D-XCB0 K9F5608D0D K9F5608D0D-J K9F5608D0D-JIB0 K9F5608D0D-P K9F5608D0D-PCB0 K9F5608D0D-PIB0 K9F5608D0D-XCB0 K9F5608D0D-XIB0 K9F5608R0D K9F5608R0D-FCB0 K9F5608R0D-FIB0 K9F5608R0D-JCB0 K9F5608R0D-JIB0 K9F5608R0D-PCB0 K9F5608R0D-PIB0 K9F5608R0D-XCB0 K9F5608R0D-XIB0 K9F5608U0D-F K9F5608U0D-FCB0 K9F5608U0D-FIB0 K9F5608U0D-J K9F5608U0D-JCB0 K9F5608U0D-JIB0 K9F5608U0D-P K9F5608U0D-PCB0 K9F5608U0D-PIB0 K9F5608U0D-XIB0 K9F5608X0D-XIB0 K9F5608R0D-J K9F5608X0D K9F5608X0D-FCB0 K9F5608X0D-FIB0 K9F5608X0D-JCB0 K9F5608X0D-JIB0 K9F5608X0D-PCB0 K9F5608X0D-PIB0 K9F5608X0D-XCB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F5608X0Ds extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. COMMAND SETS Function Read 1 Read 2 Read ID Reset Page Program Co...
Description 32M x 8 Bit NAND Flash Memory

File Size 748.61K  /  35 Page

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    K9XXG08UXA

Samsung semiconductor
Part No. K9XXG08UXA
OCR Text ...gining of data. even the writ e-intensive systems can take advantage of the k9k8g08u0a s extended reli- ability of 100k program/erase cycles by providing ecc(erro r correcting code) with real time mapping-out algorithm. the k9k8g08u0a i...
Description 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

File Size 1,108.10K  /  50 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
Part No. K9F5616D0C-P K9F5608D0C-P K9F5616D0C-D K9F5616D0C-Y K9F5608D0C-D K9F5608D0C-Y K9F5616D0C-H K9F5608Q0C-D K9F5608Q0C-H
OCR Text ...ining of data. even the write-intensive systems can take advantage of the k9f56xxx0c s extended reliability of 100k program/erase cycles ...contact with samsung. table 1. command sets note : 1. the 01h command is available only on x8 de...
Description TV 37C 37#16 PIN RECP
TV 37C 37#16 SKT RECP
32M的8位,16x 16位NAND闪存
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory 32M的8位,16米x 16位NAND闪存
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 32M的8位,16米x 16位NAND闪存

File Size 692.99K  /  42 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9F2808U0B-DIB0 K9F2808U0B-YCB0 K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808Q0C
OCR Text ... margining of data. even write-intensive systems can t ake advantage of the k9f2808x0b ? s extended reliability of 100k program/erase cycles by providing ecc(error correcting code) with real time mapping-out algorithm. the k9f2808x0b is su...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存

File Size 308.83K  /  29 Page

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    K9K8G08U0A K9K8G08U0A-P K9WAG08U1A-I K9WAG08U1A-P K9WAG08U1A

SAMSUNG[Samsung semiconductor]
Part No. K9K8G08U0A K9K8G08U0A-P K9WAG08U1A-I K9WAG08U1A-P K9WAG08U1A
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9K8G08U0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an op...
Description 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

File Size 1,064.06K  /  49 Page

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