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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1
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| OCR Text |
...egrated circuit is designed for gsm and gsm EDGE base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
679.56K /
20 Page |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
...egrated circuit is designed for gsm and gsm EDGE base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 gsm/gsm EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的gsm / gsm的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...egrated circuit is designed for gsm and gsm EDGE base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On- Chip design makes it usable ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
View
it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MW5IC2030MBR1 MW5IC2030GMBR1
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| OCR Text |
...ions for cellular applications: gsm, gsm EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Pagi... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V gsm/gsm EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
621.66K /
12 Page |
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it Online |
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Skyworks Solutions
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| Part No. |
SKY77590-51
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| OCR Text |
... t x - rx fem for quad - band gsm/ gprs/ edge w ith six linear trx switch ports and dual - band td - scdma applications ? quad - band gsm/edge and dual - band td - scdma cellular handsets encompassing - class 4 gsm850/90... |
| Description |
Tx-Rx FEM
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| File Size |
1,379.98K /
22 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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| OCR Text |
...mats for cellular applications: gsm, gsm EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
1,114.00K /
28 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
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| OCR Text |
...e station modulations including gsm EDGE and CDMA. Final Application * Typical gsm Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain -- 30 dB Power Added Efficienc... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
918.87K /
32 Page |
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it Online |
Download Datasheet |
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Price and Availability
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