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  die rectifiers Datasheet PDF File

For die rectifiers Found Datasheets File :: 1108    Search Time::3.047ms    
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    IRHI7360SE

International Rectifier
Part No. IRHI7360SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description Simple Drive Requirements
400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.18K  /  4 Page

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    IRHI7460SE IRHI7460SE-15

International Rectifier
Part No. IRHI7460SE IRHI7460SE-15
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description Simple Drive Requirements
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.37K  /  4 Page

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    ON Semi
Part No. MBRB3030CTL_D ON0439
OCR Text ... Junction Temperature * Maximum die Size * Short Heat Sink Tab Manufactured -- Not Sheared! MBRB3030CTL SCHOTTKY BARRIER RECTIFIER 30 AM...rectifiers Prepared by: David Shumate & Larry Walker Motorola Semiconductor Products Sector MBRB...
Description 30 AMPERES 30 VOLTS
From old datasheet system

File Size 154.92K  /  8 Page

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    IRHF7310SE

International Rectifier
Part No. IRHF7310SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效Rad Hard HEXFET技术晶体管)

File Size 36.02K  /  4 Page

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    JANSH2N7380 JANSR2N7380

International Rectifier
Part No. JANSH2N7380 JANSR2N7380
OCR Text ...5 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet symbol show- ing the internal inductances. m a source-drain diode ratings and characteristics parameter min t...
Description HEXFET Transistor(HEXFET 晶体

File Size 98.02K  /  8 Page

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    MUR180E

ON Semiconductor
Part No. MUR180E
OCR Text ...ained for the mur8100e (similar die construction as the mur1100e series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 v, and using equation (2) the energy absorbed by the mur8100e is approximat...
Description (MUR180E / MUR1100E) Power rectifiers

File Size 102.52K  /  6 Page

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    IRHN2C50SE

International Rectifier
Part No. IRHN2C50SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a k/w ? 4 .com u datasheet radiation performance of r...
Description (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL

File Size 208.82K  /  4 Page

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    JANSH2N7262

International Rectifier
Part No. JANSH2N7262
OCR Text ...5 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet sym- bol showing the internal inductances. source-drain diode ratings and characteristics ? parameter min ty...
Description Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85

File Size 303.37K  /  12 Page

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    IRH7450

International Rectifier
Part No. IRH7450
OCR Text ...5 in) from package to center of die. modified mosfet sym- bol showing the internal inductances. w m a measured from source lead, 6mm (0.25 in) from package to source bonding pad. ? thermal resistance parameter min typ max units test condit...
Description (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 324.59K  /  12 Page

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For die rectifiers Found Datasheets File :: 1108    Search Time::3.047ms    
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