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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM616V1002CI
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| OCR Text |
... lb disable to high-z output t bhz 0 6 0 7 0 9 ns output hold from address change t oh 3 - 3 - 3 - ns chip selection to power up time t pu 0 - 0 - 0 - ns chip selection to power downtime t pd - 12 - 15 - 20 ns output loads(b) d out 5pf* 31... |
| Description |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
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| File Size |
159.59K /
9 Page |
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it Online |
Download Datasheet
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Emerging Memory & Logic Solutions
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| Part No. |
EM640FU16E
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| OCR Text |
... lb disable to high-z output t bhz 0 20 0 25 ns output disable to high-z output t ohz 0 20 0 25 ns output hold from address change t oh 10 - 10 - ns parameter symbol 55ns 70ns unit min max min max write cycle time t wc 55 - 70 - ns chip se... |
| Description |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
112.56K /
11 Page |
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it Online |
Download Datasheet |
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Emerging Memory & Logic Solutions
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| Part No. |
EM640FU16E
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| OCR Text |
... lb disable to high-z output t bhz 0 20 0 25 ns output disable to high-z output t ohz 0 20 0 25 ns output hold from address change t oh 10 - 10 - ns parameter symbol 55ns 70ns unit min max min max write cycle time t wc 55 - 70 - ns chip se... |
| Description |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
102.09K /
11 Page |
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it Online |
Download Datasheet |
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Emerging Memory & Logic Solutions
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| Part No. |
EM640FV16FW
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| OCR Text |
... lb disable to high-z output t bhz 020025 ns output disable to high-z output t ohz 020025 ns output hold from address change t oh 10 - 10 - ns parameter symbol 55ns 70ns unit min max min max write cycle time t wc 55 - 70 - ns chip select t... |
| Description |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
118.43K /
11 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F8016R6BFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25 0 25 ns output hold from address change t oh 10 - 10 - ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw 60 - 70 - ns add... |
| Description |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
155.79K /
9 Page |
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it Online |
Download Datasheet |
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ELAN Microelctronics Corp .
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| Part No. |
EM23C3220
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| OCR Text |
... 0 ns byte output delay time t bhz 70 70 70 70 ns byte output set time t blz 10 10 10 10 ns note: 1. measured with device selected at f=5 mhz and output unloaded. 2. this parameter is periodcally sampled and is not 100% tested. 3. outpu... |
| Description |
5V Only 32M-BitM×8/2M×16Read Only Memory(5V单电2M位CMOS ROM)
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| File Size |
44.47K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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