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    2SD637 2SD0637

Panasonic Semiconductor
Part No. 2SD637 2SD0637
OCR Text ...0 240 VCE=10V Ta=25C IC -- I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Collector current IC (mA) 160 160 120 25C Ta=7...
Description Silicon NPN epitaxial planer type small signal transistor

File Size 45.73K  /  3 Page

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    2SD638 2SD639

PANASONIC[Panasonic Semiconductor]
Part No. 2SD638 2SD639
OCR Text ...0 VCE=10V Ta=25C 700 IC -- I B Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 ...to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturatio...
Description Silicon NPN epitaxial planer type(For medium-power general amplification)

File Size 39.03K  /  2 Page

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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...60 VCE=5V Ta=25C 140 IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 120 100 Collector current IC (mA...to emitter voltage VCE (V) Base current IB (mA) IB -- VBE 800 VCE=5V Ta=25C 700 100 120 IC...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

File Size 50.15K  /  3 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ... I C = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, I C = 150 mA*2 VCE = 5 V, I C = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Typ -- -- -...to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T ...
Description Silicon NPN Epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ..., IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5...to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T ...
Description Silicon NPN Epitaxial

File Size 35.10K  /  7 Page

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    2SD768 2SD768K

HITACHI[Hitachi Semiconductor]
Part No. 2SD768 2SD768K
OCR Text ....0 IC/IB = 200 500 = 500 I C/I B 200 Switching Time vs. Collector Current TC = 25C 3 tstg ton tf VCC = 30V IC = 500 IB1 = -500 IB2...to 1,000 s 1 to 1,000 ms 4 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 ...
Description Silicon NPN Epitaxial

File Size 35.66K  /  6 Page

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    2SD787 2SD788

HITACHI[Hitachi Semiconductor]
Part No. 2SD787 2SD788
OCR Text ...lector output capacitance Note: B 100 to 200 C 160 to 320 Cob 1. The 2SD787 and 2SD788 are grouped by h FE as follows. D 250 to 500 E 400 to 800 2 2SD787, 2SD788 Maximum Collector Dissipation Curve Collector Power Dissipation PC (...
Description Silicon NPN Epitaxial

File Size 30.38K  /  6 Page

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    2SD789

HITACHI[Hitachi Semiconductor]
Part No. 2SD789
OCR Text ...lector output capacitance Note: B 100 to 200 C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE* 100 -- -- -- E VCE(sat) fT Cob V MHz pF I C = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1MHz 1. The 2SD789 i...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 30.04K  /  6 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ... -IB=9mA -IB=8MA -IB=7mA S/ b 8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA -IB=2mA -IB=1mA 50 4 n tio 0.4 li...to result in personal injury. Reproduction in whole or in part is prohibited without the prior writt...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 73.22K  /  2 Page

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    2SD968 2SD968A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD968 2SD968A
OCR Text ...CE IB=20mA 1.2 1.2 IC -- I B Ta=25C 12mA 10mA 8mA 6mA 1.0 VCE=10V Ta=25C Collector power dissipation PC (W) 1.2 Printed circu...to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturatio...
Description Silicon NPN epitaxial planer type(For low-frequency driver amplification)

File Size 37.75K  /  2 Page

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