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IXYS[IXYS Corporation] IXYS, Corp.
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Part No. |
IXFH52N30Q IXFK52N30Q IXFT52N30Q
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OCR Text |
...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,83... |
Description |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances From old datasheet system N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
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File Size |
69.16K /
2 Page |
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it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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Part No. |
IXGT16N170AH1 IXGH16N170AH1 IXGH16N170A IXGT16N170A
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OCR Text |
...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching time... |
Description |
High Voltage IGBT
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File Size |
520.99K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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