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ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
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Part No. |
sTW9N150 W9N150V
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OCR Text |
...Fall time Test conditions VDD = 750v, ID = 2A, RG = 4.7, VGs = 10V (see Figure 1) Min. Typ. Tbd Tbd Tbd Tbd Max Unit ns ns ns ns
Table 7....s VDD= 45V Tj = 25C (see Figure 3) IsD = 4A, di/dt = 100A/s VDD= 45V Tj = 150C (see Figure 3) Tbd Tb... |
Description |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMEsH Power MOsFET N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMEsH?/a> Power MOsFET N-channel 1500V - 2.2ohm - 8A - TO-247 - Very high voltage PowerMEsH Power MOsFET N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMEsH⑩ Power MOsFET
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File Size |
131.28K /
9 Page |
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it Online |
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ST Microelectronics, Inc.
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Part No. |
sTFV3N150
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OCR Text |
...Fall time Test conditions VDD = 750v, ID = 1.25A, RG = 4.7, VGs = 10V (see Figure 17) Min. Typ. 24 47 45 61 Max Unit ns ns ns ns
Table 7....s VDD= 60V Tj = 25C (see Figure 19) IsD = 2.5A, di/dt = 100A/s VDD= 60V Tj = 150C (see Figure 19) 41... |
Description |
N-channel 1500V - 8 Ohm - 2.5A - TO-220 - TO-220FH - TO-247 Very high voltage PowerMEsH Power MOsFET
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File Size |
389.79K /
15 Page |
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it Online |
Download Datasheet
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