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  451-475 Datasheet PDF File

For 451-475 Found Datasheets File :: 371    Search Time::1.391ms    
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    IRPT1060A 2404

International Rectifier
Part No. IRPT1060A 2404
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 3-30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description Power Module for 1 hp Motor Drives
From old datasheet system

File Size 217.83K  /  12 Page

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    IRL3202 2246

International Rectifier
Part No. IRL3202 2246
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET
From old datasheet system

File Size 85.46K  /  7 Page

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    IRPT1057A 2398

International Rectifier
Part No. IRPT1057A 2398
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 3-30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description Power Module for 0.75 hp Motor Drives
From old datasheet system

File Size 212.96K  /  12 Page

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    JANSR2N7389

International Rectifier
Part No. JANSR2N7389
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

File Size 91.26K  /  4 Page

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    IRFBC30S IRFBC30L

IRF[International Rectifier]
Part No. IRFBC30S IRFBC30L
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

File Size 358.14K  /  10 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6802U JANTX2N6802U IRFE430
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description HEXFET TRANSISTOR

File Size 125.28K  /  8 Page

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    2SC5183 2SC5183-T1 2SC5183-T2

NEC
Part No. 2SC5183 2SC5183-T1 2SC5183-T2
OCR Text ....2 24.5 MAG 0.870 0.686 0.553 0.451 0.385 0.337 0.294 0.257 0.224 0.195 0.183 0.163 0.141 0.133 0.152 S22 ANG -24.6 -40.6 -49.8 -56.2 -59.7 ...475 0.386 0.324 0.283 0.243 0.219 0.193 0.160 0.157 0.140 0.123 0.109 0.143 S22 ANG -28.6 -44.8 -53....
Description From old datasheet system
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

File Size 59.09K  /  12 Page

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    IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL
OCR Text ...1 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A

File Size 346.70K  /  10 Page

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    SANYO
Part No. 2SC5245
OCR Text ...0.564 0.526 0.496 0.475 0.461 0.451 S22 -17.1 -28.8 -36.2 -40.6 -43.5 -45.8 -47.5 -49.6 -51.6 -52.9 VCE=1V, IC=1mA, ZO=50 Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.945 0.884 0.810 0.728 0.667 0.605 0.561 0.518 ...
Description NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier OSC Applications

File Size 159.78K  /  6 Page

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