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  41 30 Datasheet PDF File

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...0.88 --- 0.82 --- 38 --- 45 --- 41 --- 50 Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = ...30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacita...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...- --- --- --- --- --- 0.88 0.80 41 64 43 70 62 A 248 1.3 --- 62 96 65 105 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol...30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capac...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...-- S VDS = 15V, ID = 30A --- 27 41 ID = 15A --- 6.7 --- nC VDS = 16V --- 9.7 --- VGS = 5.0V --- 22 --- VGS = 0V, VDS = 10V --- 11 --- VDD =...30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text .... Typ. Max. Units --------109 0.41 14 56 1.5 --A V ns iC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,VGS=0V TJ...30 45 6 0 10 0 @Nts: oe 1 VGS = 0 V . 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, ...30 20 10 0 0 0.2 0.4 0.6 0.8 1 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 70 60 50 40 30 20 10 ...
Description MOSFET / SCHOTTKY DIODE

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS L R E CO M M E ND E D F O O TP R...30 .00 ( 12 .9 9 2 ) M A X. 1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0VR Tj = 125C, Is = 3.0A, VGS =0VR ns Tj =...30 20 10 0 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP I...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... VDS = 16V, VGS = 0V, IS = 7.0A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: * Repetitive rating;...30 .00 ( 12 .9 9 2 ) M A X. 1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G GD...30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V m...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. ...30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 K...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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