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Infineon Technologies
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| Part No. |
IPI45N06S3-16
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| OCR Text |
... 2) v dg 55 gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 65 w operating and storage temperature t j , t stg -55 ... +...16 pg-to263-3-2 sp0001-02224 3n0616 ipi45n06s3-16 pg-to262-3-1 sp0001-02217 3n0616 ipp45n06s3-16 pg-... |
| Description |
OptiMOS-T Power-Transistor
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| File Size |
299.53K /
9 Page |
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it Online |
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DYNEX SEMICONDUCTOR LTD
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| Part No. |
MP03HBT130-16
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| OCR Text |
...es january 2000 version, ds4480-4.0 ds4480-5.0 july 2002 features dual device module electrically isolated package pressure contact...16 mp03hbp130-18 or mp03hbp130-16 mp03hbn130-18 or mp03hbn130-16 note: when ordering, please use... |
| Description |
210 A, 1600 V, SCR
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| File Size |
120.63K /
8 Page |
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it Online |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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| Part No. |
BC638-16 BC640-16 BC640 BC636 BC636-10 BC636-16 BC638 BC640-10
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| OCR Text |
...pical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP medium power transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BC636; BC638; BC640
SOT54
c
E d A ... |
| Description |
PNP medium power transistors 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP medium power transistors 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 TRANSISTOR TO-92
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| File Size |
43.85K /
8 Page |
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it Online |
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Price and Availability
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