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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM3439-8F
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| OCR Text |
...Bm
Pout
45
add
36 35
22dbm
30 15
34 3.4 3.65 3.9
18
20
22
24
26
28
Frequency (GHz)
Input Power (dBm)
2
add (%)
IM3 (dBc)
-20
FLM3439-8F
C-Band Internally Matched FET
+j50 +j25
3.2... |
| Description |
C-Band Internally Matched FET
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| File Size |
272.18K /
4 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MAAPGM0080-DIE
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| OCR Text |
...Power Added Efficiency at Pin = 22dbm, and IDSQ=740mA
35 33 31 29
Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=750mA
35 33 31 29
Psat (dBm)
Psat (dBm)
27 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17... |
| Description |
Amplifier, Power, 1 W 2-18 GHz
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| File Size |
327.52K /
7 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX2027EUP-T MAX2027
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| OCR Text |
...................................22dbm Continuous Power Dissipation (TA = +70C) 20-Pin TSSOP-EP (derate 21.7mW/C above +70C) ..................................1.7W Operating Temperature Range ...........................-40C to +85C Junction ... |
| Description |
IF Digitally Controlled Variable-Gain Amplifier
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| File Size |
1,386.29K /
10 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0909A_1 MGF0909A MGF0909A1
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| OCR Text |
.../W
*1 *1:Po=P1dB *2
*2:Pi=22dbm Vf Method
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
2MIN 4.4+0/-0.3 2MIN
@
1.9*}0.4
MGF0909A TYPICAL CHARACTERIS... |
| Description |
L,S BAND POWER GaAs FET
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| File Size |
34.07K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0910A_1 MGF0910A MGF0910A1
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| OCR Text |
...od
*1:Channel to case *2:Pin=22dbm
Nov. 97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
TYPICAL CHARACTERISTICS
ID vs. VGS
6 VDS=3V Ta=25C 6 VGS=-0.5V/Step Ta=25C VGS=0V 4 4
ID vs. VDS
2
2
... |
| Description |
L, S BAND POWER GaAs FET
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| File Size |
176.99K /
4 Page |
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it Online |
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NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFS48B2122
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| OCR Text |
...nce
Test conditions Min. Pin=22dbm VDS=12V, ID(RF off)=2.0A Pin=39dBm f=2.17GHz 11 47 Channel to Case -
Limits Typ. Max. 12 48 11 48 1 15 1.2
r
2.11-2.17GHz band power amplifier for W-CDMA Base Station
Unit
dB dBm A %
deg... |
| Description |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
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| File Size |
223.84K /
2 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
PA1151
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| OCR Text |
...
IP3 measured with 2 tones @+22dbm. per tone Min and max values from 0 to 85 degrees C CDMA data available
36 1930
1950
1970
1990
V S W R v s . F re q u e n c y
In O ut
Outline Drawings
1 .9
1 .4 1930
1950
... |
| Description |
Ultra Linear Power Amplifier
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| File Size |
58.05K /
1 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
PA1157
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| OCR Text |
...
IP3 measured with 2 tones @+22dbm. per tone @ 1 MHz apart Min and max values from 0 to 85 degrees C
2000
2100
2200
V S W R vs. Freq u ency
In O ut
Outline Drawings
1 .9 1 .4 2000 2100 2200
IP 3 v s . F re q u e n c... |
| Description |
2000-2200 MHz. WCDMA Ultra Linear Power Amplifier
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| File Size |
52.60K /
1 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
PA1162
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| OCR Text |
...
IP3 measured with 2 tones @+22dbm. per tone Min and max values from 0 to 85 degrees C
V S W R vs . F re q u e n c y
Outline Drawings
1 .9 1 .4 800
In
O ut
850
900
960
IP 3 v s . F r e q u e n c y
53 52 51 800... |
| Description |
800-960 MHz(4 Watt Ultra Linear Power Amplifier)
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| File Size |
54.50K /
1 Page |
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it Online |
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Price and Availability
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