|
|
 |
Digitron Semiconductors
|
Part No. |
3N201 3N202 3N203
|
OCR Text |
... 15vdc, v g2s = 4.0vdc, i d = 20adc) v g1s(off) -0.5 -1.5 -5.0 vdc gate 2 to source cutoff voltage (v ds = 15vdc, v g1s = 0, i d = 20adc) v g2s(off) -0.2 -1.4 -5.0 vdc on characteristics zero-gate voltage dr... |
Description |
DUAL GATE MOSFET VHF AMPLIFIER
|
File Size |
1,336.94K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Solid States Devices, I...
|
Part No. |
RH0123-15
|
OCR Text |
...f = 10adc, pulse ) ( i f = 20adc, pulse ) t a = 25 oc t a = 25 oc v f1 v f2 1.30 1.45 v dc instantaneous forward voltage drop (i f = 10adc, pulse ) t a = 100 oc t a = - 5... |
Description |
Hyper Fast Centertap Rectifier
|
File Size |
51.68K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Solid States Devices, I...
|
Part No. |
RH0125 RH0125-15
|
OCR Text |
...f = 10adc, pulse ) ( i f = 20adc, pulse ) t a = 25 oc t a = 25 oc v f1 v f2 1.4 1.6 v dc instantaneous forward voltage drop (i f = 10adc, pulse ) t a = 100 oc t a = - 55 ... |
Description |
Hyper Fast Centertap Rectifier
|
File Size |
50.56K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
New Jersey Semi-Conduct...
|
Part No. |
MJ10005
|
OCR Text |
... = 10 adc, ib = 400 madc) (ic = 20adc, !b = 2.0adc) (lc = 10 adc, ib = 400 madc, tc = 100c) base emitter saturation voltage (ic = 10 adc, ib = 400 madc) (ic = 10 adc, ib = 400 madc, tc = 100c) diode forward voltage (1) (lf = 10adc) "fe vce(... |
Description |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
File Size |
104.67K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Microsemi
|
Part No. |
1N6657 1N6657R 1N6659R 1N6658R
|
OCR Text |
...e (2) i f = 10adc i f = 20adc v f1 v f2 1.0 1.2 vdc reverse leakage current (2) v r = 100v v r = 150v v r = 200v 1n6657, r 1n6658, r 1n6659, r i r1 10 adc reverse leakage current v r = 100v, t c = +... |
Description |
Dual Ultrafast Rectifier
|
File Size |
64.89K /
1 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|