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For 2-pt Found Datasheets File :: 15733    Search Time::1.234ms    
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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text ...NS (in millimeters) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = -10 V, ID = -3.0 A) ...PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 TOTA...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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    2SJ462 D11449EJ1V0DS00

NEC[NEC]
Part No. 2SJ462 D11449EJ1V0DS00
OCR Text ...e Drawings (unit : mm) 5.7 0.1 2.0 0.2 1.5 0.1 3.65 0.1 FEATURES 1.0 1 0.5 0.1 2 3 * Can be driven by a 2.5 V power s...PT Tch Tstg -12 8.0 2.5 5.0* 2.0** 150 -55 to +150 V V A A W C C Gate Protect Diode Gate Drain...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.02K  /  6 Page

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    2SJ463 2SJ463A D11198EJ1V0DS00

NEC[NEC]
Part No. 2SJ463 2SJ463A D11198EJ1V0DS00
OCR Text ...ich can be driven directly by a 2.5 V power source. The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-s...PT Tch Tstg -30 +20 +0.1 +0.4 Note 150 150 -55 to +150 V V A A mW C C 0.9 0.1 Equivalent Circu...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.00K  /  8 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -10 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode...PT PT Tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 20 # 80 Total Power Dissipatio...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...(VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ...PT PT Tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipatio...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...S (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: Max. (...PT PT Tch Tstg -60 - +20 -20, 0 - +20 - +80 35 2.0 150 -55 to +150 V V V A A W W C C 1.30.2 1.50....
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...S (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX....PT PT Tch Tstg -60 m20 -20, 0 m30 m120 35 2.0 150 -55 to +150 V V V A A W W C C 123 0.7 0.1 2.54 ...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text ...ich can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-sp...PT Tch Tstg -30 V V A A mW C C EQUIVALENT CIRCUIT Drain # 20 # 0.1 # 0.4 200 150 -55 t...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2

NEC, Corp.
NEC[NEC]
Part No. 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2
OCR Text ...AGE DIMENSIONS (in mm) 5.7 0.1 2.0 0.2 3.65 0.1 5.4 0.25 1.5 0.1 0.55 FEATURES * New package intermediate between small-signal a...PT Tch Tstg 2.0 150 -55 to +150 W C C Document No. D11233EJ1V0DS00 (1st edition) Date Publi...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor

File Size 57.30K  /  6 Page

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    2SK2158 D11234EJ1V0DS00

NEC
Part No. 2SK2158 D11234EJ1V0DS00
OCR Text ...NS (in millimeters) 0.4 -0.05 2.8 0.2 1.5 +0.1 +0.1 0.65 -0.15 2.9 0.2 FEATURES * Capable of drive gate with 1.5 V * Because...PT Tch Tstg 200 150 -55 to +150 0.4 -0.05 3 mW C C Document No. D11234EJ1V0DS00 (1st ...
Description From old datasheet system
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

File Size 57.26K  /  6 Page

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For 2-pt Found Datasheets File :: 15733    Search Time::1.234ms    
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