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    BT145 BT145-500R BT145-600R BT145-800R BT145SERIES

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT145 BT145-500R BT145-600R BT145-800R BT145SERIES
OCR Text ...nt MAX. MAX. MAX. UNIT 500R 500 16 25 300 600R 600 16 25 300 800R 800 16 25 300 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cath...mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 1.0 UNIT K/W K/W Thermal resistance junction to mo...
Description Thyristors 25 A, 500 V, SCR, TO-220AB
Transient Voltage Suppressor Diodes

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    BUK553-100A BUK553-100B BUK553-100A/B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK553-100A BUK553-100B BUK553-100A/B
OCR Text ...0 40 30 20 10 0 ID / A 24 20 16 12 8 4 0 10 7 BUK553-100A 5 VGS / V = 4 3 2 0 2 4 VDS / V 6 8 10 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100ID/...
Description TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 52.23K  /  7 Page

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    BUK553-48C

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK553-48C
OCR Text ...7 TYP. 48 12 550 240 100 3.5 22 16 18 4.5 7.5 MAX. 58 825 350 160 UNIT V S pF pF pF s s s s nH nH VDD = 12 V; ID = 5 A; VGS = 5 V; RG = 1...mb / (K/W) ZTHX53 S/ tp = 10 us RD 1E+00 100 us 0.5 0.2 0.1 0.05 0.02 P D tp D=...
Description PowerMOS transistor Voltage clamped logic level FET

File Size 65.33K  /  9 Page

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    NXP Semiconductors N.V.
Part No. BUK9E04-30B
OCR Text ...chmos logic level fet rev. 02 ? 16 february 2011 product data sheet i2pak table 1. quick reference data symbol parameter conditions min typ ...mb =25c; see figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see fi...
Description N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管

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    PSMN9R5-30YLC

NXP Semiconductors
Part No. PSMN9R5-30YLC
OCR Text ... figure 12 ; see figure 13 - - 16.5 m ? r g gate resistance f = 1 mhz - 2.35 4.7 ? dynamic characteristics q g(tot) total gate charge i d =15a; v ds =15v; v gs =10v; see figure 14 ; see figure 15 - 10.4 - nc i d =15a; v ds =15v; v gs =4....
Description N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using
N-channel 30 V 9.8 mlogic level MOSFET in LFPAK using NextPower technology

File Size 302.49K  /  15 Page

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    BUK555-200 BUK555-200A BUK555-200B

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BUK555-200 BUK555-200A BUK555-200B
OCR Text ... 8 10 12 VDS / V 14 16 18 20 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V ID / A V / DS ID Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter ...
Description PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 70.01K  /  7 Page

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    PSMN9R0-25YLC1111

NXP Semiconductors
Part No. PSMN9R0-25YLC1111
OCR Text ...1 mhz; t j = 25 c; see figure 16 - 694 - pf c oss output capacitance - 205 - pf c rss reverse transfer capacitance - 63 - pf t d(on) turn-on delay time v ds =12v; r l =0.8 ? ; v gs =4.5v; r g(ext) =4.7 ? -13-ns t r rise time - 10 - ns t ...
Description N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
N-channel 25 V 9.1 mlogic level MOSFET in LFPAK using NextPower technology

File Size 301.33K  /  15 Page

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    NXP Semiconductors N.V.
Part No. PSMN4R1-30YLC
OCR Text ...=1mhz; t j = 25 c; see figure 16 - 1502 - pf c oss output capacitance - 316 - pf c rss reverse transfer capacitance - 106 - pf t d(on) turn-on delay time v ds =15v; r l =0.6 ? ; v gs =4.5v; r g(ext) =4.7 ? -16-ns t r rise time - 19 - ns ...
Description N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

File Size 305.41K  /  15 Page

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    BUK564-200A

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK564-200A
OCR Text ...ad MIN. 3.5 TYP. 6.0 800 120 65 16 75 120 50 2.5 7.5 MAX. 1000 160 90 30 110 180 75 UNIT S pF pF pF ns ns ns ns nH nH REVERSE DIODE LIMIT...mb = f(t); parameter D = tp/T ID / A 10 7 5 BUK554-200A 120 110 100 90 80 70 60 50 40 30 20 10 0...
Description PowerMOS transistor Logic level FET 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET

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    PSMN4R0-25YLC PSMN4R0-25YLC-15

NXP Semiconductors N.V.
Part No. PSMN4R0-25YLC PSMN4R0-25YLC-15
OCR Text ...= 1 mhz; t j =25c; see figure 16 - 1407 - pf c oss output capacitance - 354 - pf c rss reverse transfer capacitance -119-pf psmn4r0-25ylc all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all r...
Description N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK
N-channel 25 V 4.5 m logic level MOSFET in LFPAK 84 A, 25 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

File Size 196.50K  /  15 Page

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