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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN030MK
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| OCR Text |
...
r P
im l e
Condition
RG=15 RG=15 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <6.1 >-2.2 200
120 -5 56.25 -65 to +175 250
...974 -62.2 0.995 -66.4 1.041 -71.3 1.077 -76.6 1.143 -82.0 1.199 -88.3 1.272 -94.5 1.348 -102.2 1.429... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
188.40K /
3 Page |
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it Online |
Download Datasheet
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Diodes
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| Part No. |
AP3766B
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| OCR Text |
...up threshold v th (st) 13 15.5 18 v minimal operating voltage v opr (min) 3 3.5 4.5 v standby current section startup current...974 4.21 v line compensation section line compensation transconductance (note 3) g m 1.14 ... |
| Description |
Low-Power Off-line PSR LED Controller
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| File Size |
335.19K /
11 Page |
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it Online |
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Sony
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| Part No. |
SGM2014AM
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| OCR Text |
...5 2 50 2.5
ms pF fF dB dB
15
18
Typical Characteristics (Ta = 25C)
ID vs. VDS
40 (VG2S = 1.5V) 20 25 (VDS = 5V)
ID vs. VG1S...974 0.970 0.969 0.968 0.967 0.967 0.967 0.962 0.959 0.956 0.955 0.952 0.950 0.950 0.950 0.949 0.945
... |
| Description |
GaAs N-channel Dual Gate MES FET
From old datasheet system
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| File Size |
47.88K /
5 Page |
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it Online |
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Sony
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| Part No. |
SGM2014AN
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| OCR Text |
...5 2 50 2.5
ms pF fF dB dB
15
18
Typical Characteristics (Ta = 25C)
ID vs. VDS
40 (VG2S = 1.5V) 20 25 (VDS = 5V)
ID vs. VG1S...974 0.970 0.969 0.968 0.967 0.967 0.967 0.962 0.959 0.956 0.955 0.952 0.950 0.950 0.950 0.949 0.945
... |
| Description |
GaAs N-channel Dual Gate MES FET
From old datasheet system
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| File Size |
53.43K /
5 Page |
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it Online |
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njr
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| Part No. |
NJG1308F
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| OCR Text |
...5C, Zs=Zl=50) RATINGS UNITS 6 V 15 dBm 300 mW -40~+85 C -55~+150 C
ELECTRICAL CHARACTERISTICS 1(Application circuit 1) PARAMETER Operatin...974 4.801 4.650 4.457 4.271 4.083 3.893 3.687 3.509 3.317 3.122 2.904 2.696 2.432 2.150 1.814 1.409 ... |
| Description |
DRIVER-AMPLIFIER GaAs MMIC
From old datasheet system
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| File Size |
413.75K /
13 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE434S01 NE434S01-T1B NE434S01-T1
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| OCR Text |
...ed Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm
0.
2
ORDERING INFORMATION
PART NUMBER NE434S01-T...974 22.748 25.818 27.860
2.47 1.94 1.87 1.56 1.33 1.18 1.05 1.05 1.08 1.09 1.09 1.12 1.12 1.18 1.... |
| Description |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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| File Size |
75.30K /
12 Page |
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it Online |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
2SC4570 2SC4570-T1 2SC4570-T2 2SC4570T74-T2 2SC4570T72-T2 2SC4570T73-T2
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| OCR Text |
...tape.
0.90.1 0.3
Marking
0.15 -0.05
+0.1
2SC4570-T2
3 kpcs./Reel
* Please contact with responsible NEC person, if you require...974 .957 .922 .882 .837 .793 .741 .693 .645 .596 .547 .504 .470 .438 .410 .386 .362 .344 .329 .312 .... |
| Description |
NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD NPN硅外延晶体管超小型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
128 x 128 pixel format, LED or EL Backlight available
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| File Size |
65.16K /
8 Page |
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it Online |
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Price and Availability
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