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  13b Datasheet PDF File

For 13b Found Datasheets File :: 4021    Search Time::1.953ms    
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    IRLBA1304 IRLBA1304P

IRF[International Rectifier]
Part No. IRLBA1304 IRLBA1304P
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLBA1304 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage I...
Description HEXFET? Power MOSFET

File Size 103.65K  /  8 Page

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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLI2910 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Tra...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    CD4069UBMS FN3321

INTERSIL[Intersil Corporation]
Part No. CD4069UBMS FN3321
OCR Text ...of JEDEC Tentative Standard No. 13b, "Standard Specifications for Description of `B' Series CMOS Devices" A1 G=A 2 B3 H=B 4 C5 I=C 6 VSS 7 14 VDD 13 F 12 L = F 11 E 10 K = E 9D 8 J=D Applications * Logic Inversion * Pulse Shaping ...
Description Inverter, Hex. (Unbuffered), Rad-Hard, CMOS, Logic
CMOS Hex Inverter
From old datasheet system

File Size 93.10K  /  8 Page

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    IRF5Y5305CM

IRF[International Rectifier]
Part No. IRF5Y5305CM
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5Y5305CM Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25 V, Starting TJ =...
Description POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package

File Size 106.37K  /  7 Page

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    IRFP250N IRFP250

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP250N IRFP250
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFP250N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage In...
Description    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

File Size 120.07K  /  8 Page

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    IRFY140CM

IRF[International Rectifier]
Part No. IRFY140CM
OCR Text ...2% K/W = C/W W/K = W/C Fig. 13b -- Basic Gate Charge Waveform Case Outline and Dimensions -- TO-257AA Pin 1 - Drain Pin 2 - Source Pin 3 - Gate 3 1 2 TO-257AA NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - ...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)

File Size 248.13K  /  6 Page

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    BZW045V8 BZW045V8B BZW04-10 BZW04-102 BZW04-102B BZW04-10B BZW04-128 BZW04-128B BZW04-13 BZW04-13B BZW04-15 BZW04-154 BZ

意法半导
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
Part No. BZW045V8 BZW045V8B BZW04-10 BZW04-102 BZW04-102B BZW04-10B BZW04-128 BZW04-128B BZW04-13 BZW04-13b BZW04-15 BZW04-154 BZW04-154B BZW04-15B BZW04-171 BZW04-171B BZW04-188 BZW04-188B BZW04-19 BZW04-19B BZW04-20 BZW04-20B BZW04-213 BZW04-213b BZW04-23 BZW04-23B BZW04-256 BZW04-256B BZW04-26 BZW04-26B BZW04-273 BZW04-273B BZW04-28 BZW04-28B BZW04-299 BZW04-299B BZW04-31 BZW04-31B BZW04-33 BZW04-33B BZW04-342 BZW04-342B BZW04-376 BZW04-376B BZW04-40 BZW04-40B BZW04-48 BZW04-48B BZW04-58 BZW04-58B BZW04-5V8 BZW04-5V8B BZW04-6V4 BZW04-6V4B BZW04-70 BZW04-70B BZW04-85 BZW04-85B BZW04-8V5 BZW04-8V5B BZW04376 BZW04376B BZW04-5V8/376 BZW04-5V8B/376B
OCR Text ...6V4B BZW04-8V5B BZW04-10B BZW04-13b BZW04-15B BZW04-19B BZW04-20B BZW04-23B BZW04-26B BZW04-28B BZW04-31B BZW04-33B BZW04-40B BZW04-48B BZW04-58B BZW04-70B BZW04-85B BZW04-102B BZW04-128B BZW04-154B BZW04-171B BZW04-188B BZW04-213b BZW04-25...
Description Low Power OFF-Line SMPS Primary Switcher
TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极单向))
TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极双向))
()
TRANSILTM

File Size 80.81K  /  6 Page

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    IRFRU6215 IRFU6215 IRFR6215

IRF[International Rectifier]
Part No. IRFRU6215 IRFU6215 IRFR6215
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + QGS QGD D.U.T. - -10V VDS IRFR/U6215 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations *...
Description HEXFET? Power MOSFET
Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

File Size 137.32K  /  10 Page

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    IRFRU9310 IRFU9310 IRFR9310

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFRU9310 IRFU9310 IRFR9310
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + D.U.T. - VDS IRFR/U9310 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Indu...
Description -400V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 7.0ohm,身份证\u003d- 1.8A

File Size 110.22K  /  10 Page

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    IRLU8203PBF IRLR8203PBF IRLR8203

IRF[International Rectifier]
Part No. IRLU8203PBF IRLR8203PBF IRLR8203
OCR Text ...sic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLR/U8203PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leaka...
Description SMPS MOSFET

File Size 266.57K  /  10 Page

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For 13b Found Datasheets File :: 4021    Search Time::1.953ms    
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