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  1000 bag Datasheet PDF File

For 1000 bag Found Datasheets File :: 5172    Search Time::3.922ms    
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    FDS3680

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3680
OCR Text ...2500 CAPACITANCE (pF) 2000 1500 1000 500 COSS 0 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description 100V N-Channel PowerTrench MOSFET

File Size 201.16K  /  8 Page

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    FDS5680

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS5680
OCR Text ...TANCE (pF) Ciss 1500 4 1000 2 500 Coss Crss 0 6 12 18 24 30 0 0 7 14 21 28 35 0 Qg, GATE CHARGE (nC) VDS, DRAIN T...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description 60V N-Channel PowerTrench?/a> MOSFET
60V N-Channel PowerTrench MOSFET
60V N-Channel PowerTrench⑩ MOSFET

File Size 259.71K  /  8 Page

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    FDS5690

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS5690
OCR Text ...00 0 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. ...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description 60V N-Channel PowerTrench MOSFET

File Size 234.20K  /  8 Page

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    FDS6375

Fairchild Semiconductor
Part No. FDS6375
OCR Text ...V -10V -15V 2500 Ciss 2000 1500 1000 500 Coss Crss f= 1 MHz VGS= 0V 4 3 2 1 0 0 5 10 15 20 25 0 0 4 8 12 16 20 Qg, GATE...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

File Size 193.52K  /  8 Page

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    MMPQ6700

FAIRCHILD[Fairchild Semiconductor]
Part No. MMPQ6700
OCR Text ...4 Die Each Die Max MMPQ6700 1000 8.0 125 240 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MMPQ6700 Qu...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description Quad NPN & PNP General Purpose Amplifier

File Size 178.21K  /  6 Page

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    STD9N10 4894

STMICROELECTRONICS[STMicroelectronics]
Part No. STD9N10 4894
OCR Text ... D = 250 A VGS = 0 Min. 100 250 1000 100 Typ . Max. Un it V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = 20 V ON () Symb ol V ...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 128.01K  /  10 Page

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    FDC645N FDC645

FAIRCHILD[Fairchild Semiconductor]
Part No. FDC645N FDC645
OCR Text ... 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t)...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description N-Channel PowerTrench MOSFET

File Size 305.15K  /  8 Page

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    FDP4020 FDP4020P FDB4020P

FAIRCHILD[Fairchild Semiconductor]
Part No. FDP4020 FDP4020P FDB4020P
OCR Text ...V 1400 1200 CAPACITANCE (pF) 1000 800 600 400 200 COSS CRSS 0 4 8 12 16 20 CISS f = 1 MHz VGS = 0 V -15V 3 2 1 0 0 3 6 Qg, GA...bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains...
Description P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

File Size 206.53K  /  7 Page

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    NDC651N

Fairchild Semiconductor, Corp.
Part No. NDC651N
OCR Text ...urce Current and Temperature 1000 800 V GS , GATE-SOURCE VOLTAGE (V) 500 CAPACITANCE (pF) 10 I D = 3.2A 8 V DS = 5V 15V C...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 238.58K  /  10 Page

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    STD15N06L

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD15N06L
OCR Text ... D = 250 A VG S = 0 Min. 60 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 15 V T c = 125 oC ON () Symbol V ...
Description N-CHANNEL POWER MOSFET
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

File Size 138.58K  /  10 Page

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For 1000 bag Found Datasheets File :: 5172    Search Time::3.922ms    
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