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  02.11 Datasheet PDF File

For 02.11 Found Datasheets File :: 89114    Search Time::1.812ms    
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    INA-01170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-01170
OCR Text ...0 10 20 1.5 15 .01 .02 .05 0.1 0.2 0.5 1.0 1.0 0 0 2 4 Vd (V) 6 8 15 .01 .05 Id (mA) 0.2 1.0 FR...11 2.5 NF (dB) 2.0 1.5 1.0 0.5 -55 -25 +25 +85 +125 NF 9 7 Gp 15 Id = 40 mA 12 3.0 2.5 Id =...
Description Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier

File Size 43.00K  /  3 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...Units C/W www.irf.com 1 02/14/02 IRF1010ES/IRF1010EL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DS...11) Starting TJ = 25C, L = 260H RG = 25, IAS = 50A, VGS =10V (See Figure 12) ISD 50A, di/dt 230A...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010E ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...Units C/W www.irf.com 1 02/14/02 IRF1010NS/IRF1010NL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DS...11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010N ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ... 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Dut...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010ZS...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1104 ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ... C/W www.irf.com 1 07/16/02 IRF1302S/IRF1302L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1302S/...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ... C/W www.irf.com 1 10/31/02 IRF1302 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1302 ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF1310NS/L 1000 EAS , Si...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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