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0.5-micron Datasheet PDF File

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				MACOM[Tyco Electronics]
Part No.	AM42-0039 CR-15
OCR Text	...39 is fabricated using a mature 0.5 micron GaAs MESFET process. The chip is fully passivated for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications. Notes: (unless ...
Description	GaAs MMIC VSAT Power Amplifier2W6.40-7.025 GHz GaAs MMIC VSAT Power Amplifier/ 2W 6.40 - 7.025 GHz GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz
File Size	40.26K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	AM42-0040
OCR Text	...40 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full chip passivation for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications. N...
Description	GaAs MMIC VSAT Power Amplifier/ 2W 5.9 - 6.4 GHz GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz
File Size	40.05K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics] MA-Com
Part No.	AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM500006V2 AM500006 AM50-0006V2
OCR Text	0,2 .075 .008 1,90 0,2 PIN # 1 V2.00 Low Noise Figure: 1.6 dB High Input IP3: -6 dBm at 3 V, 6.5 mA bias High Gain: 18 dB Single Supply: +3 to +8 VDC Low Cost SOT-26 Miniature Plastic Package Adjustable current: 3 to 20 mA with an exter...
Description	1400-2000 MHz, low noise amplifier Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No Low Noise Amplifier 1400 - 2000 MHz 1400-1520 MHz, low noise amplifier
File Size	354.04K / 7 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	0.5 - 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features * Low Noise Figure: 0.5 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	0.5 - 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features * Low Noise Figure: 0.5 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	0.5 - 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	0.5 - 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features * High Associated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise F...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...s GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems a...5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz Units d...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1] Description The ATF-13336 is a high ...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1] Description The ATF-13736 is a high performa...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

For 0.5-micron Found Datasheets File :: 5862 Search Time::1.25ms
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