0.30-0.502 pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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0.30-0.502 Datasheet PDF File

For 0.30-0.502 Found Datasheets File :: 2059 Search Time::2.485ms
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				MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
Part No.	MIC37252BR MIC37252BU MIC37252
OCR Text	...eramic or tantalum capacitor +2.0% initial output tolerance Dropout voltage = 550mV @ 2.5A Excellent line and load regulation specifications...30 1.265 1.277 80 120 January 2003 3 MIC37252 MIC37252 Micrel Typical Characterist...
Description	2.5A, Low Voltage UCap LDO Regulator 2.5A Low Voltage UCap LDO Regulator 2.5A/ Low Voltage UCap LDO Regulator 2.5A, Low Voltage UCap LDO Regulator 1.24 V-5.5 V ADJUSTABLE POSITIVE LDO REGULATOR, 1 V DROPOUT, PSSO5
File Size	75.67K / 8 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	DSEP29-06A DSEP29-06B
OCR Text	...Weight Conditions rect., d = 0.5; TC (Version A) = 135C TC (Version B) = 125C TVJ = 45C; tp = 10 ms (50 Hz), sine; (Version A) (Version B...30 30 250 200 0.2 0.1 -55...+175 175 -55...+150 A A A A A mJ A C C C W Nm g q q Features q q q ...
Description	HiPerFREDTM Epitaxial Diode with soft recovery
File Size	49.76K / 3 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] IXYS, Corp.
Part No.	DSEP29-12A
OCR Text	...ons TC = 115C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 11.5 A; L = 180 H VA = 1.25*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 30 200 14 1.2 -55...+175 175 -55...+150 A A Features A...
Description	Fast Recovery Diodes HiPerFRED Epitaxial Diode with soft recovery 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	34.48K / 2 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	HAL508 HAL508A HAL508E HAL508K HAL518K HAL517K HAL509K HAL502 HAL502E HAL502K HAL502A HAL501 HAL503 HAL503K HAL504 HAL504A HAL504E HAL505A HAL505K HAL506 HAL506A HAL506E HAL506K HAL507K HAL503A HAL516 HAL516E HAL516K HAL519 HAL523 HAL523A HAL523E HAL523K HAL501A HAL501E HAL501K HAL503E HAL504K HAL505 HAL505E HAL507A HAL507E HAL509 HAL509A HAL509E HAL516A HAL517 HAL517A HAL517E HAL518 HAL518A HAL518E
OCR Text	...r reverse voltages ranging from 0 V to -15 V. VDD 1 Reverse Voltage & Overvoltage Protection HAL5xx HAL5xx Temperature Dependent Bias H...30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3 1 - 30 70 3 - 75 400 ns O...
Description	Hall Effect Sensor Family
File Size	310.57K / 44 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B
OCR Text	...) Revision History Revision 1.0 (August, 2003) - First release. Revision 1.1 (February, 2004) -Corrected typo. CMOS SDRAM Rev. 1.1 F...30 29 28 VSS DQ7 VSSQ N.C DQ6 VDDQ N.C DQ5 VSSQ N.C DQ4 VDDQ N.C VSS CKE1 DQM CLK CKE0 A12 A11 A9...
Description	SDRAM stacked 1Gb B-die
File Size	124.59K / 12 Page	View it Online	Download Datasheet

				COMCHIP[Comchip Technology] Comchip Technology Co., Ltd.
Part No.	MB1005-101 MB5005-5010 MB3505-3510 MB MB1005-1010 MB1505-1510 MB2505-2510
OCR Text	...ed base - 1800 Volts Solderable 0.25" FASTON terminals Materials used carries U/L recognition Mechanical Data Case:Metal Case with Elect...30 grams (approx.) MB MB-W TERMINALS LEAD Min Max Min Max 28.40 28.70 28.40 28.70 10.97 11.23...
Description	High Current Bridge Rectifier
File Size	42.78K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5490
OCR Text	...ons Features * Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). * High gain : S21e2=10dB typ (f=1.5GHz). * High cutoff freque...30 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta = 25C Parameter ...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistors
File Size	38.02K / 4 Page	View it Online	Download Datasheet

				White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA-F32 EDI88512CA_LPA-F36 EDI88512CA_LPA-K EDI88512CA_LPA-N EDI88512CA_LPA-N36 EDI88512CA_LPA-T EDI88512CANB EDI88512LPAKM EDI88512LPAKC EDI88512LPANI EDI88512CATB EDI88512LPATB EDI88512LPAF36M EDI88512LPAF36I EDI88512LPAF36C EDI88512LPAF36B EDI88512LPAF32M EDI88512LPAF32I EDI88512LPAF32C EDI88512LPAF32B EDI88512CAB32M EDI88512CA/LPA-C EDI88512CA/LPA-K EDI88512CA/LPA-N EDI88512CA/LPA-N36 EDI88512CAB32I EDI88512LPAB32I EDI88512CA/LPA-F36 EDI88512LPAB32B EDI88512LPAB32C EDI88512LPAB32M EDI88512CAF32B EDI88512CA/LPA-T EDI88512CA/LPA-B32 EDI88512CAB32C EDI88512LPANB EDI88512LPANC EDI88512CAN36B EDI88512CAN36C EDI88512CANC EDI88512LPAN36C EDI88512LPAN36B EDI88512LPAN36M EDI88512CANM EDI88512CANI EDI88512CAN36I EDI88512LPAN36I EDI88512CAN36M EDI88512CA/LPA-F32 EDI88512CAKI EDI88512LPA55B32B EDI88512LPA55B32I EDI88512LPA55B32C EDI88512LPA55CB EDI88512LPA55B32M EDI88512LPA55CC EDI88512LPA55CI EDI88512LPA55F32B EDI88512LPA55CM EDI88512LPA55F32I EDI88512LPA55F32C EDI88512LPA55F36B EDI88512LPA55F32M EDI88512LPA55F36I EDI88512LPA55F36C EDI88512LPA55F36M EDI88512LPA55KC EDI88512LPA55KB EDI88512LPA55KI EDI88512LPA55N36I EDI88512LPA55N36C EDI88512LP
OCR Text	...rrent Junction Temperature, TJ -0.5 to 7.0 0 to +70 -40 to +85 -55 to +125 -65 to +150 1.5 20 175 Unit V C C C C W mA C OE X H L X CS H L L ...30 ns 0 0 0 0 ns 0 10 0 15 0 20 0 20 ns 1. This parameter is guaranteed by design but not tested....
Description	20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
File Size	265.80K / 9 Page	View it Online	Download Datasheet

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