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For 0.100a Found Datasheets File :: 39946 Search Time::3.109ms
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				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pa...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ...100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pa...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...efits q q q q q q RDS(on) = 0.0075 ID = 142A Description Specifically designed for Automotive applications, this Stripe Planar desig...100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...wer MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for Automotive applications, this HEXFET(R) p...100A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 100A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	... Max. 20 4.2 3.4 17 2.5 1.6 0.02 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction...100A/s D S Notes: Repetitive rating; pulse width limited by max. junction tempera...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteris...100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...100A/s TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s 92 0.63 180 1.3 2.0 390 2.7 V ns C 2. ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pa...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...100A/s TJ = 25oC, ISD = 14A, dISD/dt = 100A/s Intrinsic Turn-On Time is Negligible, Turn-On Speed is...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pa...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

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